IPD60R180P7ATMA1

The IPD60R180P7ATMA1 is a power transistor developed by Infineon Technologies. It is a MOSFET transistor designed for high efficiency and reliability in power electronics applications. The transistor is part of the CoolMOS P7 series, which is known for its low conduction and switching losses, making it suitable for a wide range of power supply and motor control applications.The specific IPD60R180P7ATMA1 transistor has a Vds voltage rating of 600V and a continuous drain current of 29A. It features an ultra-low Rds(on) resistance of 0.18 ohms, allowing for efficient power conversion and reduced heat dissipation. The transistor is housed in a TO-252 package, making it easy to mount on a PCB for integration into electronic circuits.The IPD60R180P7ATMA1 transistor is designed to meet various industry standards, including RoHS compliance, and is suitable for use in energy-efficient applications where high power density and reliability are essential.

Key Features

• Low on-state resistance
• High input capacitance
• Ultra-low gate charge
• Enhanced body diode dV/dt ruggedness
• Compatible with existing surface mount techniques
• RoHS compliant
• Halogen-free
• Optimized for high-frequency switching applications
• Maximum power dissipation of 273W
• Operating temperature range from -55°C to 150°C

Application

• Automotive industry for powertrain applications
• Industrial applications such as motor drives and inverters
• Renewable energy systems like solar inverters and wind turbines
• Electric vehicle charging systems
• Power supplies and UPS systems
• Home appliances such as air conditioners and refrigerators
• Consumer electronics like smartphones and tablets