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IPP60R165CP

Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor...

Inventory:8,429

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  • Part Number : IPP60R165CP

  • Package/Case : PG-TO220-3-1

  • Brands : INFINEON

  • Components Categories : FETs, MOSFETsSingle FETs, MOSFETs

  • Datesheet : IPP60R165CP DataSheet (PDF)

Quick Inquiry

Please submit RFQ for IPP60R165CP or email to us: Email: [email protected], we will contact you in 12 hours.

Technical Attributes

Features• Lowest figure-of-merit RONxQg• Ultra low gate charge• Extreme dv/dt rated• High peak current capability• Qualified according to JEDEC1) for target applications• Pb-free lead plating; RoHS compliantCoolMOS CP is specially designed for:• Hard switching topologies for Server and Telecom

Key Features

  • Lowest figure-of-merit RONxQg
  • Ultra low gate charge
  • Extreme dv/dt rated
  • High peak current capability
  • Qualified according to JEDEC1) for target applications
  • Pb-free lead plating; RoHS compliant

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer INFINEON Product Category FETs - Single
Series CoolMOS CP Packaging Tube
Enhancement Part-Aliases Through Hole
Unit-Weight Si Mounting-Style 1 N-Channel
Tradename 192 W Package-Case + 150 C
Technology - 55 C Number-of-Channels 20 V
Configuration 21 A Transistor-Type 650 V
Pd-Power-Dissipation 165 mOhms

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

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