• IPB015N08N5ATMA1 PG-TO263-7
IPB015N08N5ATMA1 PG-TO263-7


Power Field-Effect Transistor, 180A I(D), 80V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, D2PAK-7/6


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Overview of IPB015N08N5ATMA1

OptiMOS™3 Power-TransistorFeatures• Fast switching MOSFET for SMPS• Optimized technology for DC/DC converters• Qualified according to JEDEC1) for target applications• N-channel, normal level• Excellent gate charge x R DS(on) product (FOM)• Very low on-resistance R DS(on)• 100% Avalanche tested• Pb-free plating; RoHS compliant• Halogen-free according to IEC61249-2-21


Key Features

  • Fast switching MOSFET for SMPS
  • Optimized technology for DC/DC converters
  • Qualified according to JEDEC1) for target applications
  • N-channel, normal level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on)
  • 100% Avalanche tested
  • Pb-free plating; RoHS compliant
  • Halogen-free according to IEC61249-2-21




The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G6 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 65 Weeks
Samacsys Manufacturer Infineon Avalanche Energy Rating (Eas) 1230 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V Drain Current-Max (ID) 180 A
Drain-source On Resistance-Max 0.0015 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263 JESD-30 Code R-PSSO-G6
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 6
Operating Mode ENHANCEMENT MODE Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 720 A
Surface Mount YES Terminal Finish TIN
Terminal Form GULL WING Terminal Position SINGLE
Transistor Application SWITCHING

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