• IPB048N15N5LFATMA1 PG-TO263-3


Power Field-Effect Transistor, 18A I(D), 150V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2


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Overview of IPB048N15N5LFATMA1

Features• Ideal for hot-swap and e-fuse applications• Very low on-resistance RDS(on)• Wide safe operating area SOA• N-channel; Normal level• 100% Avalanche tested• Pb-free plating; RoHS compliant• Qualified according to JEDEC1) for target applications• Halogen-free according to IEC61249-2-21


Key Features

  • Ideal for hot-swap and e-fuse applications
  • Very low on-resistance RDS(on)
  • Wide safe operating area SOA
  • N-channel; Normal level
  • 100% Avalanche tested
  • Pb-free plating; RoHS compliant
  • Qualified according to JEDEC1) for target applications
  • Halogen-free according to IEC61249-2-21




The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Active
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 53 Weeks, 1 Day Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 30 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 150 V
Drain Current-Max (Abs) (ID) 120 A Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.0048 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 23 pF JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 313 W
Pulsed Drain Current-Max (IDM) 480 A Surface Mount YES
Terminal Finish TIN Terminal Form GULL WING
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING

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