• IPB048N15N5LFATMA1 PG-TO263-3
IPB048N15N5LFATMA1 PG-TO263-3

IPB048N15N5LFATMA1

Product Code: IPB048N15N5LFATMA1

Inventory:5,327

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Overview of IPB048N15N5LFATMA1

The IPB048N15N5LFATMA1 is a power MOSFET transistor designed for high-performance applications requiring efficient power management and switching capabilities. This MOSFET features a low on-state resistance and high current-handling capacity, making it ideal for power electronics applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • VSS: Ground
  • VDD: Power Supply
  • VOUT: Output
  • IN: Input
  • VCC: Positive Power Supply
  • VSS: Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IPB048N15N5LFATMA1 MOSFET for a visual representation.

Key Features

  • High Current Capability: The IPB048N15N5LFATMA1 can handle high currents, making it suitable for power applications.
  • Low On-State Resistance: This MOSFET offers low on-state resistance for efficient power management.
  • Fast Switching Speed: With its high-speed switching capabilities, this transistor ensures quick response times in switching applications.
  • High Power Dissipation: The IPB048N15N5LFATMA1 can dissipate heat effectively, enhancing its reliability in high-power environments.
  • Overcurrent Protection: Includes protection features to prevent damage from overcurrent conditions.

Note: For detailed technical specifications, please refer to the IPB048N15N5LFATMA1 datasheet.

Application

  • Power Electronics: Ideal for use in power electronics applications such as power supplies, motor controls, and inverters.
  • Switching Circuits: Suitable for switching circuits in DC-DC converters, voltage regulators, and power amplifiers.
  • Motor Drives: Can be used in motor drive circuits for efficient control of motor speed and direction.

Functionality

The IPB048N15N5LFATMA1 MOSFET transistor is designed to efficiently switch high currents and manage power in various electronic applications, providing reliable performance and durability.

Usage Guide

  • Gate Connection: Connect the Gate pin (G) to the control signal for switching the MOSFET.
  • Power Supply: Connect the Drain (D) and Source (S) pins to the power supply and load, respectively.
  • Input Signal: Apply appropriate logic levels to the Gate pin to control the ON/OFF state of the MOSFET.

Frequently Asked Questions

Q: Is the IPB048N15N5LFATMA1 suitable for high-frequency switching applications?
A: Yes, the IPB048N15N5LFATMA1 is designed for high-frequency switching applications with its fast switching speed.

Equivalent

For similar functionalities, consider these alternatives to the IPB048N15N5LFATMA1:

  • IPD048N15N5: A comparable power MOSFET with similar specifications and performance characteristics.
  • IRF048N15N: This MOSFET from Infineon offers equivalent power handling capacity and switching characteristics.

IPB048N15N5LFATMA1

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 53 Weeks, 1 Day Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 30 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 150 V
Drain Current-Max (Abs) (ID) 120 A Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.0048 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 23 pF JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 313 W
Pulsed Drain Current-Max (IDM) 480 A Surface Mount YES
Terminal Finish TIN Terminal Form GULL WING
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

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