• IPB033N10N5LFATMA1 PG-TO263-3
IPB033N10N5LFATMA1 PG-TO263-3

IPB033N10N5LFATMA1

Power Field-Effect Transistor, 23A I(D), 100V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2

Inventory:8,434

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Overview of IPB033N10N5LFATMA1

Xecor Corporation offers the highly versatile and reliable IPB033N10N5LFATMA1 driver, produced by INFINEON. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Xecor provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the IPB033N10N5LFATMA1.

Xecor also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

IPB033N10N5LFATMA1

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 52 Weeks Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 273 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 23 A Drain-source On Resistance-Max 0.0033 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 480 A
Surface Mount YES Terminal Finish TIN
Terminal Form GULL WING Terminal Position SINGLE
Transistor Element Material SILICON

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