• IPB033N10N5LFATMA1 PG-TO263-3
IPB033N10N5LFATMA1 PG-TO263-3

IPB033N10N5LFATMA1

Differentiated MOSFET Options

Inventory:8,434

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Overview of IPB033N10N5LFATMA1

IPB033N10N5LFATMA1 is a power MOSFET optimized for high-performance and reliable operations in automotive applications. It provides excellent performance for switching and controlling high-frequency signals.

Pinout

The IPB033N10N5LFATMA1 pinout refers to the configuration and function of each pin in its PG-TDSON-8 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the IPB033N10N5LFATMA1 has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Amplifier Type: Power MOSFET
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 100V
  • Id - Continuous Drain Current: 150A
  • Rds On - Drain-Source Resistance: 3.3 mOhms
  • Package / Case: PG-TDSON-8

Applications

  • Automotive industry: Designed for electric and hybrid vehicles, industrial and power supply systems, motion control applications, solar inverters, battery management systems, switching applications, DC-DC converters, energy storage systems, and renewable energy systems.

Advantages and Disadvantages

Advantages:

  • High-temperature operation: The IPB033N10N5LFATMA1 is designed for reliable operation in harsh environments with high temperatures.
  • Low resistance: The device's low drain-source resistance ensures efficient switching and power conversion.

Disadvantages:

  • Sensitivity to noise: As a high-frequency device, the IPB033N10N5LFATMA1 requires careful design to prevent interference and noise.

Equivalents

For similar functionalities, consider these alternatives to the IPB033N10N5LFATMA1:

  • Infineon IPB045N05LFA: Another power MOSFET from Infineon with similar specifications.
  • STP16NF65K: A power MOSFET from STMicroelectronics with comparable performance and features.

IPB033N10N5LFATMA1

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 52 Weeks Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 273 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 23 A Drain-source On Resistance-Max 0.0033 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 480 A
Surface Mount YES Terminal Finish TIN
Terminal Form GULL WING Terminal Position SINGLE
Transistor Element Material SILICON

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IPB033N10N5LFATMA1

Differentiated MOSFET Options

Inventory:

8,434