• IPA90R800C3
IPA90R800C3

IPA90R800C3

Field-Effect Transistor

Quantity Unit Price(USD) Ext. Price
1 $3.296 $3.30
10 $2.892 $28.92
50 $2.653 $132.65
100 $2.410 $241.00
500 $2.299 $1,149.50
1000 $2.248 $2,248.00

Inventory:4,335

*The price is for reference only.
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Overview of IPA90R800C3

The IPA90R800C3 is a 800V CoolMOS™ P7 superjunction MOSFET designed for high-voltage applications in power electronics. It features low on-state resistance and efficient switching performance, making it ideal for use in power supplies, lighting, motor control, and other high-power applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • Vcc: Power Supply Voltage
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IPA90R800C3 MOSFET for a visual representation.

Key Features

  • High Voltage Rating: With a voltage tolerance of 800V, the IPA90R800C3 is suitable for high-voltage applications.
  • Low On-State Resistance: The MOSFET offers low on-state resistance for efficient power management.
  • Fast Switching Speed: Provides fast switching characteristics, enhancing overall system performance.
  • Enhanced Thermal Performance: Designed for improved thermal stability and heat dissipation.
  • High Reliability: Ensures reliable operation in demanding power environments.

Note: For detailed technical specifications, please refer to the IPA90R800C3 datasheet.

Application

  • Power Supplies: Ideal for use in high-voltage power supply units for various electronic devices.
  • Motor Control: Suitable for motor control applications requiring high power handling capability.
  • Lighting Systems: Used in lighting fixtures and systems for efficient power management.

Functionality

The IPA90R800C3 MOSFET is a high-voltage power semiconductor device that enables efficient power switching and control in a wide range of high-power applications.

Usage Guide

  • Gate Control: Apply the appropriate voltage signal to the Gate pin for controlling the MOSFET switching behavior.
  • Power Connection: Connect the Drain (D) and Source (S) pins according to the circuit requirements.
  • Thermal Management: Ensure proper heat sinking and thermal design to maintain optimal performance.

Frequently Asked Questions

Q: What is the maximum voltage rating of the IPA90R800C3?
A: The IPA90R800C3 has a maximum voltage rating of 800V, making it suitable for high-voltage applications.

Q: Is the IPA90R800C3 suitable for high-frequency applications?
A: Yes, the IPA90R800C3 offers fast switching speed and is suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the IPA90R800C3:

  • IPA60R380P6: This power MOSFET offers a lower voltage rating with similar performance characteristics.
  • IPP60R190E6: A power MOSFET with different voltage ratings and package options, suitable for various power applications.

IPA90R800C3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Mfr Infineon Technologies
Series CoolMOS™ Package Bulk
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 6.9A (Tc) Rds On (Max) @ Id, Vgs 800mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 460µA Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 100 V
FET Feature - Power Dissipation (Max) 33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package PG-TO220 Full Pack Package / Case TO-220-3 Full Pack

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