• IPB017N10N5LFATMA1 PG-TO263-7
IPB017N10N5LFATMA1 PG-TO263-7

IPB017N10N5LFATMA1

MOSFET N-CH 100V 180A TO263-7

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Please submit RFQ for IPB017N10N5LFATMA1 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of IPB017N10N5LFATMA1

Xecor Corporation offers the highly versatile and reliable IPB017N10N5LFATMA1 driver, produced by INFINEON. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Xecor provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the IPB017N10N5LFATMA1.

Xecor also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

IPB017N10N5LFATMA1

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Mfr Infineon Technologies
Series OptiMOS™-5 Package Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4.1V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 195 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 50 V FET Feature -
Power Dissipation (Max) 313W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package PG-TO263-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab)

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Warranty, Returns, and Additional Information

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