• IPD068P03L3GATMA1 PG-TO252-3
  • IPD068P03L3GATMA1
IPD068P03L3GATMA1 PG-TO252-3
IPD068P03L3GATMA1

IPD068P03L3GATMA1

Power Field-Effect Transistor, 70A I(D), 30V, 0.0068ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3

Inventory:8,100

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Overview of IPD068P03L3GATMA1

IPD068P03L3GATMA1 Description The Infineon IPD068P03L3GATMA1 is a 1 P-channel, single-configuration MOSFET that uses advanced silicon technology to provide low power dissipation. The IPD068P03L3GATMA1 provides a 91nC gate charge in a compact size TO-252-3 package, and the miniaturization of this package results in lower thermal resistance. The MOSFET IPD068P03L3GATMA1 operates over a temperature range from -55°C to 175°C and should ensure that the minimum and maximum ambient temperature of the application is within this range. IPD068P03L3GATMA1 Features • single P-Channel in DPAK• Qualified according JEDEC1) for target applications• 175 °C operating temperature• 100% Avalanche tested• Pb-free; RoHS compliant, halogen free•  Halogen-free according to IEC61249-2-21 IPD068P03L3GATMA1  Applications • Power management• Automotive• Communication• Home Appliances

IPD068P03L3GATMA1

Key Features

  • single P-Channel in DPAK Qualified according JEDEC1) for target applications 175 °C operating temperature 100% Avalanche tested Pb-free; RoHS compliant, halogen free  Halogen-free according to IEC61249-2-21
IPD068P03L3GATMA1

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG Package Description GREEN, PLASTIC PACKAGE-3
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 52 Weeks Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 149 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 70 A Drain-source On Resistance-Max 0.0068 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 2
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 280 A Surface Mount YES
Terminal Form GULL WING Terminal Position SINGLE
Transistor Application SWITCHING

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