IPA50R500CE
N-Channel MOSFET for Automotive Use, 500V, 11.1A
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1000 | $0.908 | $908.00 |
500 | $0.934 | $467.00 |
100 | $0.994 | $99.40 |
50 | $1.126 | $56.30 |
10 | $1.338 | $13.38 |
1 | $1.545 | $1.54 |
Inventory:5,617
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Part Number : IPA50R500CE
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Package/Case : PG-TO220-3-31
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Brand : INFINEON
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Components Classification : Single FETs, MOSFETs
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Datesheet : IPA50R500CE DataSheet (PDF)
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Series : IPA50R
Overview of IPA50R500CE
The IPA50R500CE is a power field-effect transistor optimized for high speed, low energy stored in output capacitance (Eoss), and low gate charge. It provides excellent performance for analog and digital signal switching.
Pinout
The IPA50R500CE pinout refers to the configuration and function of each pin in its TO-220-3 Full Pack package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the IPA50R500CE has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by Infineon to get accurate information regarding each pin's function and electrical characteristics.
Features
- Reduced energy stored in output capacitance (Eoss): The IPA50R500CE has been designed with reduced energy stored in its output capacitance, resulting in improved switching performance and reduced electromagnetic interference.
- High body diode ruggedness: This transistor features high body diode ruggedness, making it more resistant to voltage surges and electrical noise.
- Reduced reverse recovery charge (Qrr): The IPA50R500CE has a reduced reverse recovery charge, allowing for faster switching times and improved overall system performance.
- Reduced gate charge (Qg): With reduced gate charge, this transistor requires less energy to turn on and off, resulting in increased efficiency and reliability.
- Excellent switching performance: The IPA50R500CE features high-speed switching capability, making it suitable for demanding applications that require fast signal transmission.
Applications
- Power supply circuits: The IPA50R500CE can be used in power supply circuits to provide efficient and reliable switching for DC-to-DC conversion.
- Solid-state relays: This transistor is suitable for use in solid-state relay designs, where its fast switching times and high current carrying capacity are essential.
- Motor control applications: The IPA50R500CE can be used to drive motors with high-speed switching requirements, such as robotics and medical devices.
- Aircraft and automotive applications: Its rugged design and fast switching times make it suitable for use in aircraft and automotive systems that require reliable performance under extreme conditions.
Advantages and Disadvantages
Advantages:
- High-speed switching capability: The IPA50R500CE can switch signals at high frequencies, making it suitable for demanding applications that require fast signal transmission.
- Reduced energy consumption: With reduced gate charge and output capacitance, this transistor requires less energy to operate, resulting in increased efficiency and reliability.
Disadvantages:
- Silicon limitations: Like most silicon-based transistors, the IPA50R500CE has inherent limitations due to its semiconductor material properties.
Frequently Asked Questions
Q: What is the maximum current rating of the IPA50R500CE?
A: The maximum current rating is 50 amps (IPMA). Please consult the datasheet for more information.
Q: What is the recommended operating temperature range for the IPA50R500CE?
A: The recommended operating temperature range is -40°C to +150°C. Always refer to the datasheet for specific guidelines on operating conditions.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | IPA50R500CE | Pbfree Code | Yes |
Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Part Package Code | TO-220AB |
Package Description | FLANGE MOUNT, R-PSFM-T3 | Pin Count | 3 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Factory Lead Time | 4 Weeks | Samacsys Manufacturer | Infineon |
Avalanche Energy Rating (Eas) | 129 mJ | Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 500 V |
Drain-source On Resistance-Max | 0.5 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 24 A | Surface Mount | NO |
Terminal Finish | TIN | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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