• IPA50R500CE
IPA50R500CE

IPA50R500CE

N-Channel MOSFET for Automotive Use, 500V, 11.1A

Quantity Unit Price(USD) Ext. Price
1000 $0.908 $908.00
500 $0.934 $467.00
100 $0.994 $99.40
50 $1.126 $56.30
10 $1.338 $13.38
1 $1.545 $1.54

Inventory:5,617

*The price is for reference only.
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Overview of IPA50R500CE

The IPA50R500CE is a power field-effect transistor optimized for high speed, low energy stored in output capacitance (Eoss), and low gate charge. It provides excellent performance for analog and digital signal switching.

Pinout

The IPA50R500CE pinout refers to the configuration and function of each pin in its TO-220-3 Full Pack package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the IPA50R500CE has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by Infineon to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Reduced energy stored in output capacitance (Eoss): The IPA50R500CE has been designed with reduced energy stored in its output capacitance, resulting in improved switching performance and reduced electromagnetic interference.
  • High body diode ruggedness: This transistor features high body diode ruggedness, making it more resistant to voltage surges and electrical noise.
  • Reduced reverse recovery charge (Qrr): The IPA50R500CE has a reduced reverse recovery charge, allowing for faster switching times and improved overall system performance.
  • Reduced gate charge (Qg): With reduced gate charge, this transistor requires less energy to turn on and off, resulting in increased efficiency and reliability.
  • Excellent switching performance: The IPA50R500CE features high-speed switching capability, making it suitable for demanding applications that require fast signal transmission.

Applications

  • Power supply circuits: The IPA50R500CE can be used in power supply circuits to provide efficient and reliable switching for DC-to-DC conversion.
  • Solid-state relays: This transistor is suitable for use in solid-state relay designs, where its fast switching times and high current carrying capacity are essential.
  • Motor control applications: The IPA50R500CE can be used to drive motors with high-speed switching requirements, such as robotics and medical devices.
  • Aircraft and automotive applications: Its rugged design and fast switching times make it suitable for use in aircraft and automotive systems that require reliable performance under extreme conditions.

Advantages and Disadvantages

Advantages:

  • High-speed switching capability: The IPA50R500CE can switch signals at high frequencies, making it suitable for demanding applications that require fast signal transmission.
  • Reduced energy consumption: With reduced gate charge and output capacitance, this transistor requires less energy to operate, resulting in increased efficiency and reliability.

Disadvantages:

  • Silicon limitations: Like most silicon-based transistors, the IPA50R500CE has inherent limitations due to its semiconductor material properties.

Frequently Asked Questions

Q: What is the maximum current rating of the IPA50R500CE?
A: The maximum current rating is 50 amps (IPMA). Please consult the datasheet for more information.

Q: What is the recommended operating temperature range for the IPA50R500CE?
A: The recommended operating temperature range is -40°C to +150°C. Always refer to the datasheet for specific guidelines on operating conditions.

IPA50R500CE

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IPA50R500CE Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3 Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 4 Weeks Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 129 mJ Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 500 V
Drain-source On Resistance-Max 0.5 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
JESD-609 Code e3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 24 A Surface Mount NO
Terminal Finish TIN Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

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