• SIHG20N50C-E3 TO247-3
SIHG20N50C-E3 TO247-3

SIHG20N50C-E3

This N-channel TO-247AC-3 MOSFET, SIHG20N50C-E3, complies with the RoHS directive, ensuring environmental friendliness

Quantity Unit Price(USD) Ext. Price
1 $1.535 $1.54
10 $1.318 $13.18
25 $1.156 $28.90
100 $1.015 $101.50
500 $0.952 $476.00
1000 $0.924 $924.00

Inventory:4,407

*The price is for reference only.
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Overview of SIHG20N50C-E3

The SIHG20N50C-E3 is a power MOSFET transistor designed for high-power switching applications in electronic circuits. It features a rugged silicon technology that provides excellent performance and reliability in demanding environments.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SIHG20N50C-E3 for a visual representation.

Key Features

  • High Power Handling Capability: The SIHG20N50C-E3 can handle high power levels, making it suitable for power electronics applications.
  • Low ON-Resistance: With low ON-resistance, this MOSFET minimizes power losses and enhances efficiency in switching circuits.
  • Fast Switching Speed: The fast switching speed of the SIHG20N50C-E3 enables rapid switching transitions in electronic circuits.
  • Enhanced Thermal Performance: This MOSFET is designed to dissipate heat efficiently, ensuring optimal performance under high temperature conditions.
  • Rugged Design: The rugged silicon technology used in the SIHG20N50C-E3 provides robustness and durability in challenging operating environments.

Note: For detailed technical specifications, please refer to the SIHG20N50C-E3 datasheet.

Application

  • Power Supplies: Ideal for use in power supply circuits for efficient power management.
  • Motor Control: Suitable for motor control applications where high-power switching is required.
  • Inverters: Commonly used in inverter circuits for converting DC power to AC power in various electronic systems.

Functionality

The SIHG20N50C-E3 is a high-power MOSFET transistor that provides efficient power switching capabilities in electronic circuits. It offers reliable performance and rugged construction for demanding applications.

Usage Guide

  • Gate Connection: Connect the gate pin (G) to the gate drive circuit for controlling the switching of the MOSFET.
  • Drain and Source Connections: Connect the drain (D) and source (S) pins appropriately in the circuit configuration for power handling.

Frequently Asked Questions

Q: Can the SIHG20N50C-E3 be used in high-temperature environments?
A: Yes, the SIHG20N50C-E3 is designed for enhanced thermal performance and can operate efficiently in high-temperature conditions.

Equivalent

For similar functionalities, consider these alternatives to the SIHG20N50C-E3:

  • IRFB7430PBF: A power MOSFET transistor with comparable performance characteristics to the SIHG20N50C-E3.
  • FDP8870: This MOSFET offers similar power handling capabilities and reliability for high-power switching applications.

SIHG20N50C-E3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style Through Hole Package / Case TO-247-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 500 V Id - Continuous Drain Current 20 A
Rds On - Drain-Source Resistance 270 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 3 V Qg - Gate Charge 65 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 250 mW Channel Mode Enhancement
Brand Vishay / Siliconix Configuration Single
Fall Time 44 ns Forward Transconductance - Min 6.4 S
Height 20.82 mm Length 15.87 mm
Product Type MOSFET Rise Time 27 ns
Factory Pack Quantity 500 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 32 ns
Typical Turn-On Delay Time 80 ns Width 5.31 mm
Unit Weight 0.211644 oz

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SIHG20N50C-E3

This N-channel TO-247AC-3 MOSFET, SIHG20N50C-E3, complies with the RoHS directive, ensuring environmental friendliness

Inventory:

4,407