SI7850DP-T1-E3
60V, 6.2A Power MOSFET
Inventory:4,250
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
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Part Number : SI7850DP-T1-E3
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Package/Case : PowerPAK-SO-8
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Manufacturer : VISHAY
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Components Classification : Single FETs, MOSFETs
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Datesheet : SI7850DP-T1-E3 DataSheet (PDF)
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Series : SI7850DP
The SI7850DP-T1-E3 is a dual N-channel MOSFET IC designed for power management applications. This IC features high efficiency, low on-resistance, and fast switching speeds, making it suitable for various power supply and motor control systems. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SI7850DP-T1-E3 IC for a visual representation. Note: For detailed technical specifications, please refer to the SI7850DP-T1-E3 datasheet. Functionality The SI7850DP-T1-E3 is a dual N-channel MOSFET IC that enables efficient power management and control in various electronic systems. It offers high performance and reliability in power supply and motor control applications. Usage Guide Q: What is the maximum voltage rating for the SI7850DP-T1-E3? Q: Is the SI7850DP-T1-E3 suitable for high-temperature environments? For similar functionalities, consider these alternatives to the SI7850DP-T1-E3:Overview of SI7850DP-T1-E3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The SI7850DP-T1-E3 can handle voltages up to X volts.
A: Yes, the SI7850DP-T1-E3 is designed to operate reliably in high-temperature environments.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | PowerPAK-SO-8 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 6.2 A | Rds On - Drain-Source Resistance | 22 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 18 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.8 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI7 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 12 ns |
Forward Transconductance - Min | 26 S | Height | 1.04 mm |
Length | 6.15 mm | Product Type | MOSFET |
Rise Time | 10 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N Channel |
Typical Turn-Off Delay Time | 25 ns | Typical Turn-On Delay Time | 10 ns |
Width | 5.15 mm | Part # Aliases | SI7850DP-E3 |
Unit Weight | 0.017870 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy ?
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Shipping and Package ?
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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SI7850DP-T1-E3
60V, 6.2A Power MOSFET
Inventory:
4,250Warranty & Returns
After Sales Service
What after-sales service can be provided?
We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:
·Initiate the request within 90 days after the item's shipment date.
·Coordinate the return or exchange with our team.
·Keep the items in their original condition as delivered.
·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.
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Package
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The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.
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