• SI7850DP-T1-E3 PowerPAKSO-8
SI7850DP-T1-E3 PowerPAKSO-8

SI7850DP-T1-E3

SI7850DP-T1-E3 N-Channel MOSFET, 6.2 A, 60 V, 8-Pin PowerPAK SO Vishay

Inventory:4,250

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Overview of SI7850DP-T1-E3

MOSFET, N SO-8 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:6.2A; Resistance, Rds On:0.031ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:SOIC PowerPAK; Termination Type:SMD; Current, Idm Pulse:40A; External Depth:5.26mm; External Length / Height:1.2mm; N-channel Gate Charge:27nC; No. of Pins:8; Power Dissipation:1.8W; Power, Pd:1.8W; Power, Ptot:1.8W; Quantity, Reel:3000; Resistance, Rds on Max:0.022ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:3.3°C/W; Voltage, Vds Max:60V; Voltage, Vgs Max:20V; Voltage, Vgs th Min:1V; Width, External:6.2mm; Width, Tape:12mm

SI7850DP-T1-E3

Key Features

  • TrenchFET® power MOSFETs
  • New low thermal resistance PowerPAK® package with low 1.07 mm profile
  • PWM optimized for fast switching
  • 100 % Rg tested
  • Application

    ["Primary Side Switch for 24 V DC/DC Applications ", "Secondary Synchronous Rectifier"]

    Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Product Category MOSFET RoHS Details
    Technology Si Mounting Style SMD/SMT
    Package / Case PowerPAK-SO-8 Transistor Polarity N-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
    Id - Continuous Drain Current 6.2 A Rds On - Drain-Source Resistance 22 Ohms
    Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
    Qg - Gate Charge 18 nC Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.8 W
    Channel Mode Enhancement Tradename TrenchFET
    Series SI7 Brand Vishay Semiconductors
    Configuration Single Fall Time 12 ns
    Forward Transconductance - Min 26 S Height 1.04 mm
    Length 6.15 mm Product Type MOSFET
    Rise Time 10 ns Factory Pack Quantity 3000
    Subcategory MOSFETs Transistor Type 1 N Channel
    Typical Turn-Off Delay Time 25 ns Typical Turn-On Delay Time 10 ns
    Width 5.15 mm Part # Aliases SI7850DP-E3
    Unit Weight 0.017870 oz

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