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In Stock:3,000
SI2323DS-T1-E3 is a high-quality Single FETs, MOSFETs from VISHAY with a operating temperature range of - 55 C ~ + 150 C
Part Number : SI2323DS-T1-E3
Package/Case : SOT-23-3
Manufacturer : VISHAY
Components Classification : Single FETs, MOSFETs
DataSheet : SI2323DS-T1-E3 DataSheet (PDF)
Series : SI2323DS
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $0.453 | $0.45 |
| 10 | $0.362 | $3.62 |
| 30 | $0.324 | $9.72 |
| 100 | $0.275 | $27.50 |
| 500 | $0.249 | $124.50 |
| 1000 | $0.236 | $236.00 |
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
| Id - Continuous Drain Current | 4.7 A | Rds On - Drain-Source Resistance | 39 mOhms |
| Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 400 mV |
| Qg - Gate Charge | 19 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.25 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI2 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 48 ns |
| Forward Transconductance - Min | 16 S | Height | 1.45 mm |
| Length | 2.9 mm | Product Type | MOSFET |
| Rise Time | 43 ns | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 71 ns | Typical Turn-On Delay Time | 25 ns |
| Width | 1.6 mm | Part # Aliases | SI2323DS-T1-BE3 SI2323DS-E3 |
| Unit Weight | 0.000282 oz |
The SI2323DS-T1-E3 is a P-channel MOSFET transistor designed for use in various electronic applications. This transistor features a compact size and low on-resistance, making it suitable for power management and switching circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SI2323DS-T1-E3 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the SI2323DS-T1-E3 datasheet. Functionality The SI2323DS-T1-E3 P-channel MOSFET transistor is designed to control the flow of power in electronic circuits. It offers low on-resistance and high switching speeds for reliable operation. Usage Guide Q: Can the SI2323DS-T1-E3 handle high-power applications? Q: Is the SI2323DS-T1-E3 suitable for automotive applications? For similar functionalities, consider these alternatives to the SI2323DS-T1-E3:Overview of SI2323DS-T1-E3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The SI2323DS-T1-E3 is suitable for moderate power applications due to its low on-resistance. For high-power applications, consider higher-rated MOSFET transistors.
A: Yes, the SI2323DS-T1-E3 can be used in automotive applications where P-channel MOSFET transistors are required for power control.Equivalent
Warranty, Returns, and Additional Information
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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Inventory:
3,000We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:
·Initiate the request within 90 days after the item's shipment date.
·Coordinate the return or exchange with our team.
·Keep the items in their original condition as delivered.
·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.
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