SI7469DP-T1-GE3
Single-Element N-Channel MOSFET, Capable of Handling 1.8A Drain Current
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1000 | $1.013 | $1,013.00 |
500 | $1.045 | $522.50 |
100 | $1.121 | $112.10 |
30 | $1.288 | $38.64 |
10 | $1.450 | $14.50 |
1 | $1.711 | $1.71 |
Inventory:8,426
- 90-day after-sales guarantee
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Part Number : SI7469DP-T1-GE3
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Package/Case : PowerPAK-SO-8
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Manufacturer : VISHAY
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Components Classification : Single FETs, MOSFETs
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Datesheet : SI7469DP-T1-GE3 DataSheet (PDF)
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Series : SI7469
The SI7469DP-T1-GE3 is a P-Channel MOSFET transistor designed for high-speed switching applications. It features a low on-resistance and low gate charge, making it suitable for efficient power management in various electronic circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SI7469DP-T1-GE3 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the SI7469DP-T1-GE3 datasheet. Functionality The SI7469DP-T1-GE3 P-Channel MOSFET transistor enables high-speed switching with low on-resistance, making it a reliable component for power management and control in electronic systems. Usage Guide Q: Can the SI7469DP-T1-GE3 be used in high-frequency applications? For similar functionalities, consider these alternatives to the SI7469DP-T1-GE3:Overview of SI7469DP-T1-GE3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the SI7469DP-T1-GE3 is suitable for high-speed switching applications, including high-frequency circuits.Equivalent

Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | PowerPAK-SO-8 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 80 V |
Id - Continuous Drain Current | 28 A | Rds On - Drain-Source Resistance | 29 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 160 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 83 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI7 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 110 ns |
Forward Transconductance - Min | 52 S | Height | 1.04 mm |
Length | 6.15 mm | Product Type | MOSFET |
Rise Time | 220 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 95 ns | Typical Turn-On Delay Time | 45 ns |
Width | 5.15 mm | Part # Aliases | SI7469DP-GE3 |
Unit Weight | 0.017870 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy ?
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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SI7469DP-T1-GE3
Single-Element N-Channel MOSFET, Capable of Handling 1.8A Drain Current
Inventory:
8,426
Warranty & Returns
After Sales Service
What after-sales service can be provided?
We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:
·Initiate the request within 90 days after the item's shipment date.
·Coordinate the return or exchange with our team.
·Keep the items in their original condition as delivered.
·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.
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Package
How to ensure that the parts will be intact during transportation?
The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.




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