SI4214DDY-T1-GE3
SI4214DDY-T1-GE3, Dual N-channel MOSFET Transistor 7.5A 30V, 8-Pin SOIC
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Part Number : SI4214DDY-T1-GE3
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Package/Case : 8-SOIC
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Brands : VISHAY
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Components Categories : FET, MOSFET Arrays
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Datesheet : SI4214DDY-T1-GE3 DataSheet (PDF)
The SI4214DDY-T1-GE3 is a dual-channel MOSFET driver IC designed for high-performance power management applications. It features a dual-channel drive capability and is optimized for driving N-channel synchronous rectification MOSFETs in various power supply designs. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SI4214DDY-T1-GE3 IC for a visual representation. Note: For detailed technical specifications, please refer to the SI4214DDY-T1-GE3 datasheet. Functionality The SI4214DDY-T1-GE3 is a dual-channel MOSFET driver optimized for driving N-channel MOSFETs in power management applications. It provides high efficiency, fast switching speeds, and integrated protection features for reliable performance. Usage Guide Q: Can the SI4214DDY-T1-GE3 operate at high frequencies? Q: What is the maximum operating temperature of the SI4214DDY-T1-GE3? For similar functionalities, consider these alternatives to the SI4214DDY-T1-GE3:Overview of SI4214DDY-T1-GE3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the SI4214DDY-T1-GE3 is designed to operate at high switching frequencies suitable for power management applications.
A: The SI4214DDY-T1-GE3 can operate reliably up to a maximum temperature of X degrees Celsius.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Transferred | Ihs Manufacturer | VISHAY SILICONIX |
Part Package Code | SOT | Package Description | SMALL OUTLINE, R-PDSO-G8 |
Pin Count | 8 | Reach Compliance Code | |
ECCN Code | EAR99 | Samacsys Manufacturer | Vishay |
Avalanche Energy Rating (Eas) | 5 mJ | Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V | Drain Current-Max (ID) | 8.5 A |
Drain-source On Resistance-Max | 0.0195 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 86 pF | JEDEC-95 Code | MS-012AA |
JESD-30 Code | R-PDSO-G8 | Moisture Sensitivity Level | 1 |
Number of Elements | 2 | Number of Terminals | 8 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 3.1 W |
Pulsed Drain Current-Max (IDM) | 30 A | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | PURE MATTE TIN |
Terminal Form | GULL WING | Terminal Position | DUAL |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Turn-off Time-Max (toff) | 108 ns | Turn-on Time-Max (ton) | 59 ns |
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