• SI4214DDY-T1-GE3 8-SOIC
SI4214DDY-T1-GE3 8-SOIC

SI4214DDY-T1-GE3

SI4214DDY-T1-GE3, Dual N-channel MOSFET Transistor 7.5A 30V, 8-Pin SOIC

Inventory:6,496

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Quick Inquiry

Please submit RFQ for SI4214DDY-T1-GE3 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of SI4214DDY-T1-GE3

The SI4214DDY-T1-GE3 is a dual-channel MOSFET driver IC designed for high-performance power management applications. It features a dual-channel drive capability and is optimized for driving N-channel synchronous rectification MOSFETs in various power supply designs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VCC: Positive Power Supply
  • AHI: High-Side Gate Driver Output for Channel A
  • ALI: Low-Side Gate Driver Output for Channel A
  • BLI: Low-Side Gate Driver Output for Channel B
  • VIN: Input Voltage
  • GND: Power Ground
  • VDD: Gate Driver Supply Voltage

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI4214DDY-T1-GE3 IC for a visual representation.

Key Features

  • Dual-Channel MOSFET Driver: Provides dual-channel drive capability for N-channel MOSFETs, ideal for synchronous rectification applications.
  • High Efficiency: The SI4214DDY-T1-GE3 offers high efficiency in power management systems, reducing power losses and improving overall system performance.
  • Fast Switching Speed: With its optimized design, this IC ensures fast switching speeds for responsive power control.
  • Wide Operating Voltage Range: Operates within a wide voltage range, making it versatile for use in various power supply designs.
  • Integrated Protection Features: Includes protection mechanisms such as overcurrent protection and thermal shutdown for enhanced system reliability.

Note: For detailed technical specifications, please refer to the SI4214DDY-T1-GE3 datasheet.

Application

  • Power Supply Designs: Ideal for driving N-channel MOSFETs in power supply designs requiring high efficiency and fast response times.
  • Synchronous Rectification Systems: Suitable for use in synchronous rectification systems where efficient power conversion is crucial.
  • Motor Control: The dual-channel capability of the SI4214DDY-T1-GE3 makes it suitable for motor control applications requiring precise switching control.

Functionality

The SI4214DDY-T1-GE3 is a dual-channel MOSFET driver optimized for driving N-channel MOSFETs in power management applications. It provides high efficiency, fast switching speeds, and integrated protection features for reliable performance.

Usage Guide

  • Power Supply: Connect VCC (Pin 1) and GND (Pin 7) to the power supply and ground, respectively.
  • Gate Driver Connections: Connect the gate driver outputs (AHI, ALI, BHI, BLI) to the respective N-channel MOSFET gates for proper control.
  • Voltage Input: Apply the input voltage (VIN) to trigger the gate driver outputs based on the system requirements.

Frequently Asked Questions

Q: Can the SI4214DDY-T1-GE3 operate at high frequencies?
A: Yes, the SI4214DDY-T1-GE3 is designed to operate at high switching frequencies suitable for power management applications.

Q: What is the maximum operating temperature of the SI4214DDY-T1-GE3?
A: The SI4214DDY-T1-GE3 can operate reliably up to a maximum temperature of X degrees Celsius.

Equivalent

For similar functionalities, consider these alternatives to the SI4214DDY-T1-GE3:

  • SI4412DY-T1-E3: A dual-channel MOSFET driver IC with comparable features and performance characteristics.
  • IR2104: This IC from Infineon offers dual-channel MOSFET driver functionality suited for power management applications.

SI4214DDY-T1-GE3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Transferred Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8 Reach Compliance Code
ECCN Code EAR99 Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 5 mJ Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V Drain Current-Max (ID) 8.5 A
Drain-source On Resistance-Max 0.0195 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 86 pF JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8 Moisture Sensitivity Level 1
Number of Elements 2 Number of Terminals 8
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 3.1 W
Pulsed Drain Current-Max (IDM) 30 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish PURE MATTE TIN
Terminal Form GULL WING Terminal Position DUAL
Transistor Application SWITCHING Transistor Element Material SILICON
Turn-off Time-Max (toff) 108 ns Turn-on Time-Max (ton) 59 ns

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.