IRLML0060TRPBF
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN






Inventory:4,807
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Part Number : IRLML0060TRPBF
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Package/Case : Micro3?/SOT-23
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Brands : International Rectifier
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : IRLML0060TRPBF DataSheet (PDF)
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IRG4PC40SPBF
The IRG4PC40SPBF is a 600V Discrete Insulated Gate Bipolar Transistor, optimized for minimum saturation voltage and low operating frequencies. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Technical Attributes
Description:The IRLML0060TRPBF is a single N-Channel MOSFET with a maximum drain current of 2.7A and a maximum drain-source voltage of 60V. It is housed in a SC-59, SOT-23-3, and TO-236-3 package and has a maximum power dissipation of 1.25W.Features:• Low On-Resistance• Low Gate Charge• Low Input Capacitance• Low Threshold Voltage• High Current Handling Capability• High Frequency Operation• High Power Dissipation• RoHS CompliantApplications:The IRLML0060TRPBF is suitable for a wide range of applications, including:• DC-DC Converters• Motor Control• Load Switching• Battery Management• Power Management• High-Side Switching• Low-Side Switching• Audio Amplifiers• Lighting Control
Key Features
- Low On-Resistance
- Low Gate Charge
- Low Input Capacitance
- Low Threshold Voltage
- High Current Handling Capability
- High Frequency Operation
- High Power Dissipation
- RoHS Compliant
Application
SWITCHINGWarranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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