• IRLR2705TRPBF D-Pak
IRLR2705TRPBF D-Pak

IRLR2705TRPBF

Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

Inventory:4,862

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Overview of IRLR2705TRPBF

Description:The INFINEON FETs Single IRLR2705TRPBF is a single n-channel enhancement mode field effect transistor (FET). It features a maximum drain source breakdown voltage of 55 V, a gate source threshold voltage that ranges from 1 V to 2 V and a typically turn-off delay time of 21 ns. The FET comes in a TO-252-3 package with a unit weight of 0.139332 oz.Features:- Maximum drain to source breakdown voltage of 55 V.- Gate source threshold voltage ranges from 1 V to 2 V. - Typical turn-off delay time of 21 ns. - Packaged in TO-252-3 package. - Unit weight of 0.139332 oz. - Single n-channel enhancement mode FET. - Operating temperature range of -55 C. Applications: This device is suitable for applications such as motor control, power management, and switching applications. It can be used to control the power of LED lighting, battery chargers, and automotive applications such as powertrains and smart fuel filters.

IRLR2705TRPBF

Key Features

  • - Maximum drain to source breakdown voltage of 55 V.
  • - Gate source threshold voltage ranges from 1 V to 2 V.
  • - Typical turn-off delay time of 21 ns.
  • - Packaged in TO-252-3 package.
  • - Unit weight of 0.139332 oz.
  • - Single n-channel enhancement mode FET.
  • - Operating temperature range of -55 C.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IRLR2705TRPBF Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2 Reach Compliance Code not_compliant
ECCN Code EAR99 Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Rating (Eas) 110 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 55 V
Drain Current-Max (Abs) (ID) 28 A Drain Current-Max (ID) 28 A
Drain-source On Resistance-Max 0.051 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA JESD-30 Code R-PSSO-G2
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 2
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 68 W
Pulsed Drain Current-Max (IDM) 110 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON

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