• IRLR2705TRPBF TO-252-3
IRLR2705TRPBF TO-252-3

IRLR2705TRPBF

N-type Silicon Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) suitable for use as a switch or amplifier in electronic circuits

Quantity Unit Price(USD) Ext. Price
100 $0.325 $32.50
30 $0.331 $9.93
10 $0.336 $3.36
1 $0.344 $0.34

Inventory:4,862

*The price is for reference only.
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Overview of IRLR2705TRPBF

The IRLR2705TRPBF is a power MOSFET designed for high-efficiency switching applications in power supplies, motor controls, and other electronic systems. This MOSFET features a low on-resistance and fast switching characteristics, making it ideal for high-frequency switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE: Gate terminal for controlling the switching operation
  • DRAIN: Power supply connection
  • SOURCE: Ground connection
  • VCC: Positive supply voltage

Circuit Diagram

Include a circuit diagram illustrating the usage of the IRLR2705TRPBF MOSFET in a switching circuit for better understanding.

Key Features

  • Low On-Resistance: The IRLR2705TRPBF offers a low on-resistance, reducing power losses and improving efficiency.
  • High Switching Speed: With fast switching characteristics, this MOSFET is suitable for high-frequency applications.
  • High Power Handling Capacity: Capable of handling high power levels, making it suitable for power electronics applications.
  • Enhanced Thermal Performance: Designed to dissipate heat efficiently, ensuring reliable operation under high-power conditions.
  • Reverse Polarity Protection: Built-in reverse polarity protection for added safety and circuit protection.

Note: For detailed technical specifications, please refer to the IRLR2705TRPBF datasheet.

Application

  • Power Supplies: Ideal for use in switch-mode power supplies for efficient power conversion.
  • Motor Control: Suitable for motor control applications requiring high-efficiency power switching.
  • Inverter Circuits: Used in inverter circuits for converting DC power to AC power in various electronic systems.

Functionality

The IRLR2705TRPBF MOSFET provides efficient switching operation in power electronics applications, ensuring high performance and reliability in various circuits.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the GATE pin to control the ON/OFF state of the MOSFET.
  • Power Connections: Connect the DRAIN pin to the power supply and the SOURCE pin to ground for proper operation.
  • Heat Dissipation: Ensure proper heat sinking to maintain the MOSFET within its temperature limits for reliable operation.

Frequently Asked Questions

Q: Can the IRLR2705TRPBF be used in automotive applications?
A: Yes, the IRLR2705TRPBF is suitable for automotive applications such as electronic control units and power management systems.

Equivalent

For alternatives with similar functionalities, consider the following:

  • IRF540NPBF: A power MOSFET with comparable characteristics to the IRLR2705TRPBF for high-power switching applications.
  • IRL540NPBF: This MOSFET offers similar performance and characteristics, suitable for power electronics and motor control.

IRLR2705TRPBF

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case DPAK-3 (TO-252-3)
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 55 V Id - Continuous Drain Current 28 A
Rds On - Drain-Source Resistance 65 mOhms Vgs - Gate-Source Voltage - 16 V, + 16 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 16.7 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 46 W Channel Mode Enhancement
Brand Infineon Technologies Configuration Single
Fall Time 29 ns Forward Transconductance - Min 11 S
Height 2.3 mm Length 6.5 mm
Product Type MOSFET Rise Time 100 ns
Factory Pack Quantity 2000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type HEXFET Power MOSFET
Typical Turn-Off Delay Time 21 ns Typical Turn-On Delay Time 8.9 ns
Width 6.22 mm Unit Weight 0.011640 oz

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