• IRG4PH50UPBF
IRG4PH50UPBF

IRG4PH50UPBF

IRG4PH50UPBF by International Rectifier

Inventory:8,606

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for IRG4PH50UPBF using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of IRG4PH50UPBF

The IRG4PH50UPBF is a high power insulated gate bipolar transistor (IGBT) designed for high-efficiency power electronic applications. It features a high current rating and low saturation voltage, making it suitable for various power control and conversion systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): Connected to the load
  • Gate (G): Control terminal for turning the IGBT on/off
  • Emitter (E): Connected to the ground
  • VCE: Collector-Emitter Voltage
  • IC: Collector Current
  • VGE: Gate-Emitter Voltage
  • ECG: Emitter Current Gain

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRG4PH50UPBF IGBT for visual reference.

Key Features

  • High Power IGBT: Designed for high-power applications requiring efficient switching.
  • Low Saturation Voltage: Ensures minimal power loss during operation.
  • Fast Switching Speed: Allows for quick switching in power control circuits.
  • High Current Rating: Capable of handling high currents for power conversion.
  • Integrated Diode: Includes an integrated diode for freewheeling or anti-parallel diode operation.
  • Temperature Stability: Maintains stable operation over a wide temperature range.

Note: For detailed technical specifications, please refer to the IRG4PH50UPBF datasheet.

Application

  • Motor Drives: Ideal for use in motor drive circuits for efficient power control.
  • Power Inverters: Suitable for power inverter applications requiring high power handling.
  • Renewable Energy Systems: Used in renewable energy systems such as solar inverters and wind turbine converters.

Functionality

The IRG4PH50UPBF is an IGBT designed for high-power switching applications, providing efficient power control and conversion in various electronic systems.

Usage Guide

  • Gate Control: Apply appropriate gate voltage to turn the IGBT on/off for power control.
  • Heat Dissipation: Ensure proper heat sinking for temperature management during operation.
  • Load Connection: Connect the collector and emitter terminals to the load for power transmission.

Frequently Asked Questions

Q: Is the IRG4PH50UPBF suitable for high-frequency switching applications?
A: Yes, the IRG4PH50UPBF is designed for high-frequency switching with fast switching speeds.

Equivalent

For similar functionalities, consider these alternatives to the IRG4PH50UPBF:

  • IXGK100N60B3: A comparable high-power IGBT with similar performance characteristics.
  • FGL40N120AND: This IGBT offers high current handling capabilities and low saturation voltage.

IRG4PH50UPBF

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IRG4PH50UPBF Rohs Code Yes
Part Life Cycle Code Obsolete Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3 Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer Infineon
Additional Feature LOW CONDUCTION LOSS Case Connection COLLECTOR
Collector Current-Max (IC) 45 A Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE Fall Time-Max (tf) 500 ns
Gate-Emitter Thr Voltage-Max 6 V Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247AC JESD-30 Code R-PSFM-T3
JESD-609 Code e3 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 200 W
Qualification Status Not Qualified Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application POWER CONTROL
Transistor Element Material SILICON Turn-off Time-Nom (toff) 600 ns
Turn-on Time-Nom (ton) 49 ns

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment ?

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

packageimg

IRG4PH50UPBF

IRG4PH50UPBF by International Rectifier

Inventory:

8,606