Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3


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Overview of IRFR6215TRPBF

DescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.• P-Channel• 175°C Operating Temperature• Surface Mount (IRFR6215)• Straight Lead (IRFU6215)• Advanced Process Technology• Fast Switching• Fully Avalanche Rated• Lead-Free


Key Features





The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IRFR6215TRPBF Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2 Reach Compliance Code not_compliant
ECCN Code EAR99 Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 310 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 150 V
Drain Current-Max (Abs) (ID) 13 A Drain Current-Max (ID) 13 A
Drain-source On Resistance-Max 0.295 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA JESD-30 Code R-PSSO-G2
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 2
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 110 W Pulsed Drain Current-Max (IDM) 44 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN OVER NICKEL Terminal Form GULL WING
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING

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