DMN2400UV-7
MOSFET MOSFET,N-CHANNEL
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
5 | $0.122 | $0.61 |
50 | $0.105 | $5.25 |
150 | $0.098 | $14.70 |
500 | $0.089 | $44.50 |
3000 | $0.086 | $258.00 |
6000 | $0.084 | $504.00 |
Inventory:4,043
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Part Number : DMN2400UV-7
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Package/Case : SOT563-6
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Brands : DIODES
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Components Categories : FET, MOSFET Arrays
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Datesheet : DMN2400UV-7 DataSheet (PDF)
The DMN2400UV-7 is an N-channel enhancement-mode MOSFET transistor designed for high-speed switching applications. It features low threshold voltage and low on-resistance, making it ideal for use in power management and load-switching circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the DMN2400UV-7 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the DMN2400UV-7 datasheet. Functionality The DMN2400UV-7 is an N-channel enhancement-mode MOSFET transistor that facilitates high-speed switching and efficient power management in electronic circuits. Usage Guide Q: Can the DMN2400UV-7 be used in high-frequency applications? For similar functionalities, consider these alternatives to the DMN2400UV-7:Overview of DMN2400UV-7
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the DMN2400UV-7 is designed for high-speed switching applications, making it suitable for high-frequency operation.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-563-6 | Transistor Polarity | N-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 1.33 A | Rds On - Drain-Source Resistance | 480 mOhms |
Vgs - Gate-Source Voltage | - 12 V, + 12 V | Vgs th - Gate-Source Threshold Voltage | 500 mV |
Qg - Gate Charge | 500 pC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 530 mW |
Channel Mode | Enhancement | Series | DMN2400 |
Brand | Diodes Incorporated | Configuration | Dual |
Fall Time | 10.54 ns | Product | MOSFET Small Signals |
Product Type | MOSFET | Rise Time | 7.28 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 2 N-Channel | Typical Turn-Off Delay Time | 13.74 ns |
Typical Turn-On Delay Time | 4.06 ns | Unit Weight | 0.000212 oz |
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