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DMN2400UV-7

MOSFET MOSFET,N-CHANNEL

Quantity Unit Price(USD) Ext. Price
5 $0.122 $0.61
50 $0.105 $5.25
150 $0.098 $14.70
500 $0.089 $44.50
3000 $0.086 $258.00
6000 $0.084 $504.00

Inventory:4,043

*The price is for reference only.
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Overview of DMN2400UV-7

The DMN2400UV-7 is an N-channel enhancement-mode MOSFET transistor designed for high-speed switching applications. It features low threshold voltage and low on-resistance, making it ideal for use in power management and load-switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Controls the voltage on the MOSFET gate terminal
  • Drain (D): Connected to the positive supply voltage

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DMN2400UV-7 MOSFET for a visual representation.

Key Features

  • High-Speed Switching: The DMN2400UV-7 is optimized for high-speed switching applications, enabling fast and efficient operation.
  • Low Threshold Voltage: Features a low threshold voltage, allowing for enhanced control in low-voltage circuits.
  • Low On-Resistance: The MOSFET has low on-resistance, resulting in minimal power dissipation and improved efficiency.
  • Enhancement-Mode Design: Utilizes an enhancement-mode structure for easy and precise control of the switching operation.
  • Small Package: Available in a compact and space-saving SOT-23 package.

Note: For detailed technical specifications, please refer to the DMN2400UV-7 datasheet.

Application

  • Power Management: Ideal for power management circuits in portable devices and low-power systems.
  • Load Switching: Suitable for load-switching applications in various electronic circuits and systems.
  • DC-DC Converters: Used in DC-DC converter circuits for efficient voltage regulation and power conversion.

Functionality

The DMN2400UV-7 is an N-channel enhancement-mode MOSFET transistor that facilitates high-speed switching and efficient power management in electronic circuits.

Usage Guide

  • Gate Control: Apply the appropriate voltage levels to the gate terminal to control the switching operation.
  • Load Connection: Connect the load or the circuit to be switched between the drain and source terminals.
  • Power Supply: Ensure proper connections of the drain and source for the desired voltage operation.

Frequently Asked Questions

Q: Can the DMN2400UV-7 be used in high-frequency applications?
A: Yes, the DMN2400UV-7 is designed for high-speed switching applications, making it suitable for high-frequency operation.

Equivalent

For similar functionalities, consider these alternatives to the DMN2400UV-7:

  • AO3400A - N-Channel MOSFET with similar features and performance characteristics.
  • NTD5867NL - Another N-channel MOSFET suitable for high-speed switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-563-6 Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 1.33 A Rds On - Drain-Source Resistance 480 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 500 mV
Qg - Gate Charge 500 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 530 mW
Channel Mode Enhancement Series DMN2400
Brand Diodes Incorporated Configuration Dual
Fall Time 10.54 ns Product MOSFET Small Signals
Product Type MOSFET Rise Time 7.28 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 2 N-Channel Typical Turn-Off Delay Time 13.74 ns
Typical Turn-On Delay Time 4.06 ns Unit Weight 0.000212 oz

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