• DMN32D2LDF-7 TSSOP-5
DMN32D2LDF-7 TSSOP-5

DMN32D2LDF-7

SOT-353 0.4A 30V Dual N-channel

Quantity Unit Price(USD) Ext. Price
6000 $0.055 $330.00
3000 $0.058 $174.00
500 $0.066 $33.00
150 $0.073 $10.95
50 $0.082 $4.10
5 $0.100 $0.50

Inventory:4,390

*The price is for reference only.
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Submit your quote request for DMN32D2LDF-7 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of DMN32D2LDF-7

The DMN32D2LDF-7 is a dual N-channel MOSFET transistor designed for high-speed switching applications. This transistor features low on-resistance and low gate charge, making it suitable for power management and motor control systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate - Control terminal for the MOSFET
  • D1: Drain 1 - Output terminal for channel 1
  • S1: Source 1 - Input terminal for channel 1
  • D2: Drain 2 - Output terminal for channel 2
  • S2: Source 2 - Input terminal for channel 2
  • VCC: Positive power supply
  • GND: Power ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DMN32D2LDF-7 MOSFET for a visual representation.

Key Features

  • Dual N-Channel MOSFET:The DMN32D2LDF-7 consists of two N-channel MOSFETs in a single package, allowing for independent control of two channels.
  • Low On-Resistance:This MOSFET transistor offers low on-resistance to minimize power loss and improve efficiency.
  • Low Gate Charge:With low gate charge requirements, the DMN32D2LDF-7 enables fast switching speeds in high-frequency applications.
  • High-Speed Switching:Designed for high-speed switching operations, this transistor is suitable for use in power electronics and motor control systems.
  • Wide Operating Voltage Range:Operates within a broad voltage range, making it adaptable to various voltage requirements.

Note: For detailed technical specifications, please refer to the DMN32D2LDF-7 datasheet.

Application

  • Power Management Systems:Ideal for use in power management systems requiring high-speed switching capabilities.
  • Motor Control:Suitable for motor control applications where efficient and rapid switching of electrical signals is essential.
  • Voltage Regulation:Used in voltage regulation circuits to control the flow of current with low resistance.

Functionality

The DMN32D2LDF-7 dual N-channel MOSFET transistor is designed to facilitate high-speed switching operations with low on-resistance and gate charge. It offers precise control in power management and motor control applications.

Usage Guide

  • Power Connections:Connect VCC (Pin 6) to the positive power supply and GND (Pin 7) to power ground.
  • Channel Configuration:Utilize the D1/S1 and D2/S2 terminals for independent control of each channel.
  • Gate Control:Apply appropriate voltage levels to the G (Gate) pin to control the switching behavior of the MOSFET channels.

Frequently Asked Questions

Q: What is the typical on-resistance of the DMN32D2LDF-7?
A: The DMN32D2LDF-7 features a typical on-resistance of X ohms, ensuring efficient power management.

Q: Can the DMN32D2LDF-7 handle high-frequency switching?
A: Yes, this MOSFET transistor is designed for high-speed switching applications, making it suitable for high-frequency operations.

Equivalent

For similar functionalities, consider these alternatives to the DMN32D2LDF-7:

  • IRF3205: A dual N-channel MOSFET with comparable performance characteristics for power management and motor control applications.
  • FDD8447L: This MOSFET transistor offers similar dual N-channel capabilities and high-speed switching for demanding electronic projects.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-353-5 Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 400 mA Rds On - Drain-Source Resistance 1.2 Ohms
Vgs - Gate-Source Voltage - 10 V, + 10 V Vgs th - Gate-Source Threshold Voltage 600 mV
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 280 mW Channel Mode Enhancement
Series DMN32 Brand Diodes Incorporated
Configuration Dual Height 1 mm
Length 2.2 mm Product MOSFET Small Signals
Product Type MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 2 N-Channel
Width 1.35 mm Unit Weight 0.000212 oz

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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DMN32D2LDF-7

SOT-353 0.4A 30V Dual N-channel

Inventory:

4,390
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We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

·Initiate the request within 90 days after the item's shipment date.

·Coordinate the return or exchange with our team.

·Keep the items in their original condition as delivered.

·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.

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How to ensure that the parts will be intact during transportation?

The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.

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