DMN32D2LDF-7
SOT-353 0.4A 30V Dual N-channel
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
5 | $0.091 | $0.46 |
50 | $0.075 | $3.75 |
150 | $0.067 | $10.05 |
500 | $0.060 | $30.00 |
3000 | $0.053 | $159.00 |
6000 | $0.050 | $300.00 |
Inventory:4,390
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Part Number : DMN32D2LDF-7
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Package/Case : TSSOP-5
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Brand : DIODES
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Components Classification : FET, MOSFET Arrays
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Datesheet : DMN32D2LDF-7 DataSheet (PDF)
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Series : DMN32
The DMN32D2LDF-7 is a dual N-channel MOSFET transistor designed for high-speed switching applications. This transistor features low on-resistance and low gate charge, making it suitable for power management and motor control systems. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the DMN32D2LDF-7 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the DMN32D2LDF-7 datasheet. Functionality The DMN32D2LDF-7 dual N-channel MOSFET transistor is designed to facilitate high-speed switching operations with low on-resistance and gate charge. It offers precise control in power management and motor control applications. Usage Guide Q: What is the typical on-resistance of the DMN32D2LDF-7? Q: Can the DMN32D2LDF-7 handle high-frequency switching? For similar functionalities, consider these alternatives to the DMN32D2LDF-7:Overview of DMN32D2LDF-7
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The DMN32D2LDF-7 features a typical on-resistance of X ohms, ensuring efficient power management.
A: Yes, this MOSFET transistor is designed for high-speed switching applications, making it suitable for high-frequency operations.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-353-5 | Transistor Polarity | N-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 400 mA | Rds On - Drain-Source Resistance | 1.2 Ohms |
Vgs - Gate-Source Voltage | - 10 V, + 10 V | Vgs th - Gate-Source Threshold Voltage | 600 mV |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 280 mW | Channel Mode | Enhancement |
Series | DMN32 | Brand | Diodes Incorporated |
Configuration | Dual | Height | 1 mm |
Length | 2.2 mm | Product | MOSFET Small Signals |
Product Type | MOSFET | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 2 N-Channel |
Width | 1.35 mm | Unit Weight | 0.000212 oz |
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