• DMN32D2LDF-7 SOT-353
DMN32D2LDF-7 SOT-353


Dual MOSFET, N Channel, 30 V, 30 V, 400 mA, 400 mA, 1.2 ohm


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Overview of DMN32D2LDF-7

The DMN32D2LDF-7 is a dual N-channel logic level gate FET array. It is designed for use in low voltage, low power applications. It has a drain-to-source voltage of 30V and a maximum input capacitance of 39pF at 3V. It has a maximum Rds-on of 1.2Ohm at 100mA and 4V. It has a maximum Vgs-th of 1.2V at 250µA and a maximum power dissipation of 500mW. It is available in a 5-TSSOP SC-70-5 SOT-353 surface mount package and is suitable for use in a wide range of temperature ranges from -55°C to 150°C.The DMN32D2LDF-7 is suitable for use in a variety of applications such as power management, motor control, and signal conditioning. It can also be used in automotive, industrial, and consumer electronics.

Key Features

  • Common Source Dual N-Channel MOSFET
  • Low On-Resistance
  • Very Low Gate Threshold Voltage, 1.2V max
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Small Surface Mount Package
  • ESD Protected Gate
  • Lead Free By Design/RoHS Compliant (Note 2)
  • "Green" Device (Note 3)
  • Qualified to AEC-Q 101 Standards for High Reliability


Diodes Incorporated Inventory


The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Diodes Incorporated Product Category FETs - Arrays
Mfr Diodes Incorporated Series -
Package Tape & Reel (TR)Cut Tape (CT)Digi-Reel® Product-Status Active
FET-Type 2 N-Channel (Dual) Common Source FET-Feature 400mA
Drain-to-Source-Voltage-Vdss - Current-Continuous-Drain-Id-25°C 39pF @ 3V
Rds-On-Max-Id-Vgs Surface Mount

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