• DMN3067LW-7 SOT323-3
DMN3067LW-7 SOT323-3

DMN3067LW-7

MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC

Quantity Unit Price(USD) Ext. Price
5 $0.075 $0.38
50 $0.061 $3.05
150 $0.054 $8.10
500 $0.049 $24.50
3000 $0.044 $132.00
6000 $0.042 $252.00

Inventory:4,677

*The price is for reference only.
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Submit your quote request for DMN3067LW-7 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of DMN3067LW-7

The DMN3067LW-7 is a logic level N-channel enhancement mode MOSFET designed for high-speed switching applications.This MOSFET features a low on-resistance and fast switching characteristics,making it suitable for use in power management circuits, motor control, and other electronic applications.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source
  • VDD:Power Supply Voltage
  • GND:Ground
  • NC:No Connection


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DMN3067LW-7 MOSFET for a visual representation.

Key Features

  • Enhancement Mode MOSFET:The DMN3067LW-7 is an enhancement mode MOSFET that operates at logic level voltages for improved compatibility with low-voltage control signals.
  • Low On-Resistance:This MOSFET offers a low on-resistance,resulting in reduced power dissipation and improved efficiency in switching applications.
  • High-Speed Switching:With fast switching characteristics,the DMN3067LW-7 is capable of rapid turn-on and turn-off times,ideal for high-speed applications.
  • High Current Handling Capacity:This MOSFET can handle high continuous current levels,allowing for robust performance in power management circuits.
  • Compact Package:Available in a small and space-saving package,the DMN3067LW-7 is suitable for applications with size constraints.

Note:For detailed technical specifications,please refer to the DMN3067LW-7 datasheet.

Application

  • Power Management:Ideal for use in power management circuits,such as voltage regulators and DC-DC converters.
  • Motor Control:Suitable for motor control applications in robotics,automotive systems,and industrial machinery.
  • Switching Circuits:Used in high-speed switching circuits for on/off control of electronic components.

Functionality

The DMN3067LW-7 is a logic level MOSFET that provides efficient switching capabilities for various electronic applications.Its low on-resistance and high-speed performance make it a versatile component for power control and switching.

Usage Guide

  • Gate Voltage:The gate of the DMN3067LW-7 should be driven with a logic-level voltage to switch the MOSFET on and off.
  • Power Connections:Connect the drain (D) and source (S) pins appropriately in the circuit based on the application requirements.
  • Heat Dissipation:Ensure proper heat sinking or thermal management for the MOSFET to maintain optimal performance.

Frequently Asked Questions

Q:Can the DMN3067LW-7 be used in high-frequency applications?
A:Yes,the fast switching characteristics of the DMN3067LW-7 make it suitable for high-frequency applications requiring quick response times.

Equivalent

For similar functionalities,consider these alternatives to the DMN3067LW-7:

  • IRF3205:An N-channel MOSFET with comparable specifications and performance characteristics to the DMN3067LW-7.
  • BSC027N04LS:This MOSFET offers similar high-speed switching capabilities and low on-resistance for efficient power management.

DMN3067LW-7

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-323-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 2.6 A Rds On - Drain-Source Resistance 67 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 1.5 V
Qg - Gate Charge 4.6 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.1 W
Channel Mode Enhancement Series DMN3067
Brand Diodes Incorporated Configuration Single
Fall Time 6.1 ns Product Type MOSFET
Rise Time 5.2 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 15 ns Typical Turn-On Delay Time 3.8 ns
Unit Weight 0.000212 oz

Warranty & Returns

Warranty, Returns, and Additional Information

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    Returns for Exchange: within 90 days

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DMN3067LW-7

MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC

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4,677
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We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

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