• DMP10H4D2S-7 SOT23-3
DMP10H4D2S-7 SOT23-3

DMP10H4D2S-7

The DMP10H4D2S-7 chip inductor is a compact component, measuring 0805, with an inductance of 0.39uH, featuring a tolerance of +/-10%

Quantity Unit Price(USD) Ext. Price
5 $0.066 $0.33
50 $0.053 $2.65
150 $0.045 $6.75
500 $0.041 $20.50
3000 $0.037 $111.00
6000 $0.035 $210.00

Inventory:7,162

*The price is for reference only.
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Overview of DMP10H4D2S-7

The DMP10H4D2S-7 is a high-voltage N-channel MOSFET transistor designed for power management applications. This MOSFET features a drain-source voltage of 100V and a continuous drain current of 10A, making it suitable for various power switching and amplification tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate Terminal
  • D: Drain Terminal
  • S: Source Terminal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DMP10H4D2S-7 MOSFET for a better understanding of its usage.

Key Features

  • High Voltage Rating: The DMP10H4D2S-7 can handle up to 100V drain-source voltage, suitable for high-power applications.
  • High Current Capability: With a continuous drain current of 10A, this MOSFET can effectively handle power amplification and switching tasks.
  • Low On-Resistance: The MOSFET has low on-resistance, leading to minimal power loss and efficient operation.
  • Fast Switching Speed: It offers fast switching characteristics, making it ideal for applications requiring quick response times.
  • Temperature Stability: The DMP10H4D2S-7 exhibits good temperature stability, ensuring reliable performance across varying operating conditions.

Note: For detailed technical specifications, please refer to the DMP10H4D2S-7 datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems, such as DC-DC converters and motor control circuits.
  • High-Power Amplification: Suitable for high-power amplification applications, including audio amplifiers and power supplies.
  • Switching Circuits: Used in power switching circuits for efficient control of current flow.

Functionality

The DMP10H4D2S-7 MOSFET is designed to control and amplify high-power signals with its high voltage and current handling capabilities. It serves as a reliable and efficient component in power management and amplification systems.

Usage Guide

  • Gate Control: Apply appropriate voltage to the gate terminal to control the switching behavior of the MOSFET.
  • Power Connections: Connect the drain and source terminals in the circuit based on the desired power flow direction.
  • Heat Dissipation: Ensure proper heat sinking or thermal management due to the high current and voltage handling capacities of the MOSFET.

Frequently Asked Questions

Q: What is the maximum drain-source voltage of the DMP10H4D2S-7?
A: The DMP10H4D2S-7 can handle a maximum drain-source voltage of 100V.

Q: Can the DMP10H4D2S-7 be used in high-power amplifier circuits?
A: Yes, the DMP10H4D2S-7 is suitable for high-power amplification applications due to its 10A continuous drain current rating.

Equivalent

For similar functionalities, consider these alternatives to the DMP10H4D2S-7:

  • IRF540N: A widely used N-channel MOSFET with comparable voltage and current ratings for power management applications.
  • FQP30N06L: This MOSFET offers similar performance characteristics to the DMP10H4D2S-7 and is suitable for power switching applications.

DMP10H4D2S-7

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 270 mA Rds On - Drain-Source Resistance 4.2 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 1.8 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 440 mW
Channel Mode Enhancement Series DMP10
Brand Diodes Incorporated Configuration Single
Fall Time 4.9 ns Height 0.975 mm
Length 2.9 mm Product Type MOSFET
Rise Time 2.6 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 8.4 ns Typical Turn-On Delay Time 3.3 ns
Width 1.3 mm Unit Weight 0.000282 oz

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Warranty, Returns, and Additional Information

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DMP10H4D2S-7

The DMP10H4D2S-7 chip inductor is a compact component, measuring 0805, with an inductance of 0.39uH, featuring a tolerance of +/-10%

Inventory:

7,162
Overview of DMP10H4D2S-7 Specifications Warranty & Returns Similar Products Popular Products

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