• SIR871DP-T1-GE3 SO-8
SIR871DP-T1-GE3 SO-8

SIR871DP-T1-GE3

P-Channel MOSFET with 1 element, suitable for high power applications

Inventory:5,900

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Overview of SIR871DP-T1-GE3

The SIR871DP-T1-GE3 is a dual P-Channel MOSFET in a PowerPAK® SO-8 package designed for high efficiency and power management applications. This MOSFET features a low ON-resistance and high current capability, making it suitable for various power switching and conversion tasks.

Pinout

(Note: The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • SOURCE 1: Source terminal for MOSFET 1
  • GATE 1: Gate terminal for MOSFET 1
  • DRAIN 1: Drain terminal for MOSFET 1
  • SOURCE 2: Source terminal for MOSFET 2
  • GATE 2: Gate terminal for MOSFET 2
  • DRAIN 2: Drain terminal for MOSFET 2
  • VSS: Negative Power Supply


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SIR871DP-T1-GE3 MOSFET for a visual representation.

Key Features

  • Dual P-Channel MOSFET: Features two P-Channel MOSFETs in a single package for improved power management.
  • Low ON-Resistance: The SIR871DP-T1-GE3 offers low ON-resistance for reduced power loss in switching applications.
  • High Current Capability: With its high current handling capacity, this MOSFET is suitable for power electronics applications.
  • PowerPAK® SO-8 Package: Comes in a PowerPAK® SO-8 package for efficient thermal performance and space-saving design.
  • Fast Switching Speed: Provides fast switching characteristics, enabling rapid power control in various systems.

Note: For detailed technical specifications, please refer to the SIR871DP-T1-GE3 datasheet.

Application

  • Power Management: Ideal for power management tasks in electronic circuits requiring high efficiency.
  • Power Switching: Suitable for power switching applications such as motor control, DC-DC converters, and LED lighting.
  • Battery Management: Used in battery management systems and power distribution circuits for efficient power handling.

Functionality

The SIR871DP-T1-GE3 dual P-Channel MOSFET is designed to efficiently switch high currents with low ON-resistance, providing reliable power management in various applications.

Usage Guide

  • Power Supply: Connect the source terminals and gate terminals to the respective power supply and control signals.
  • Load Connection: Connect the drain terminals to the load for power switching or control.
  • Thermal Considerations: Ensure proper heat sinking or thermal management for optimal MOSFET performance.

Frequently Asked Questions

Q:Is the SIR871DP-T1-GE3 suitable for high-frequency switching applications?
A:Yes, the SIR871DP-T1-GE3 MOSFET can handle high-frequency switching due to its fast switching speed.

Q:What is the maximum current rating for the SIR871DP-T1-GE3?
A:The SIR871DP-T1-GE3 is rated for a maximum continuous drain current, which can be found in the datasheet specifications.

Equivalent

For similar functionalities, consider these alternatives to the SIR871DP-T1-GE3:

  • Si3456ADVT1-GE3: Another dual P-Channel MOSFET offering similar specifications and performance characteristics.
  • IRF7319TRPBF: This dual P-Channel MOSFET from Infineon provides comparable features and is suitable for power management applications.

SIR871DP-T1-GE3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case PowerPAK-SO-8
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 48 A
Rds On - Drain-Source Resistance 28 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.2 V Qg - Gate Charge 90 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 69 W Channel Mode Enhancement
Tradename TrenchFET, PowerPAK Series SIR
Brand Vishay / Siliconix Configuration Single
Height 1.04 mm Length 6.15 mm
Product Type MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs Width 5.15 mm
Unit Weight 0.017870 oz

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SIR871DP-T1-GE3

P-Channel MOSFET with 1 element, suitable for high power applications

Inventory:

5,900