SIR871DP-T1-GE3
MOSFET -100V Vds 20V Vgs SO-8
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Part Number : SIR871DP-T1-GE3
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Package/Case : POWERPAK-8
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Brands : Siliconix
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Components Categories : Single FETs, MOSFETs
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Datesheet : SIR871DP-T1-GE3 DataSheet (PDF)
The SIR871DP-T1-GE3 is a dual P-Channel MOSFET in a PowerPAK® SO-8 package designed for high efficiency and power management applications. This MOSFET features a low ON-resistance and high current capability, making it suitable for various power switching and conversion tasks. (Note: The pin configuration below is a general representation.Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SIR871DP-T1-GE3 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the SIR871DP-T1-GE3 datasheet. Functionality The SIR871DP-T1-GE3 dual P-Channel MOSFET is designed to efficiently switch high currents with low ON-resistance, providing reliable power management in various applications. Usage Guide Q:Is the SIR871DP-T1-GE3 suitable for high-frequency switching applications? Q:What is the maximum current rating for the SIR871DP-T1-GE3? For similar functionalities, consider these alternatives to the SIR871DP-T1-GE3:Overview of SIR871DP-T1-GE3
Pinout
Circuit DiagramKey Features
Application
Frequently Asked Questions
A:Yes, the SIR871DP-T1-GE3 MOSFET can handle high-frequency switching due to its fast switching speed.
A:The SIR871DP-T1-GE3 is rated for a maximum continuous drain current, which can be found in the datasheet specifications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | PowerPAK-SO-8 |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 48 A |
Rds On - Drain-Source Resistance | 28 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1.2 V | Qg - Gate Charge | 90 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 69 W | Channel Mode | Enhancement |
Tradename | TrenchFET, PowerPAK | Series | SIR |
Brand | Vishay / Siliconix | Configuration | Single |
Height | 1.04 mm | Length | 6.15 mm |
Product Type | MOSFET | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Width | 5.15 mm |
Unit Weight | 0.017870 oz |
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