• SI2319DS-T1-E3 SOT-23-3
  • SI2319DS-T1-E3 SOT-23-3
  • SI2319DS-T1-E3 SOT-23-3
  • SI2319DS-T1-E3 SOT-23-3
SI2319DS-T1-E3 SOT-23-3
SI2319DS-T1-E3 SOT-23-3
SI2319DS-T1-E3 SOT-23-3
SI2319DS-T1-E3 SOT-23-3

SI2319DS-T1-E3

Surface-mount device in SOT23 package

Inventory:9,503

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Overview of SI2319DS-T1-E3

The SI2319DS-T1-E3 is a P-channel enhancement mode field-effect transistor (FET) designed for use in various electronic applications. This transistor offers high current handling capabilities and low ON-resistance, making it suitable for power management and switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • S: Source
  • D: Drain
  • SOT-23 Package

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI2319DS-T1-E3 FET for a visual representation.

Key Features

  • P-Channel Enhancement Mode FET: Provides efficient current control and switching capabilities.
  • Low ON-Resistance: Ensures minimal voltage drop across the transistor for power efficiency.
  • High Current Handling: Capable of handling significant currents in power applications.
  • SOT-23 Package: Compact surface-mount package for easy PCB mounting.
  • Fast Switching Speed: Enables rapid switching transitions for responsive circuit operation.

Note: For detailed technical specifications, please refer to the SI2319DS-T1-E3 datasheet.

Application

  • Power Management: Ideal for power control and management circuits in various electronic devices.
  • Switching Circuits: Suitable for use in switching applications for turning on/off power paths.
  • Voltage Regulation: Can be utilized in voltage regulation circuits to control output voltages.

Functionality

The SI2319DS-T1-E3 FET is designed to regulate current flow and act as a switch in electronic circuits. It offers efficient power handling and reliable performance in power management applications.

Usage Guide

  • Gate Connection: Connect the Gate (G) pin to the control signal for turning the transistor on/off.
  • Source and Drain Connections: Connect the Source (S) and Drain (D) pins according to the circuit requirements.
  • Mounting: SOT-23 surface-mount package allows for easy soldering onto PCBs.

Frequently Asked Questions

Q: Is the SI2319DS-T1-E3 suitable for high-frequency applications?
A: Yes, the SI2319DS-T1-E3 offers fast switching speeds and is suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the SI2319DS-T1-E3:

  • SI2319DS-T1-GE3: A similar P-Channel FET offering comparable performance with minor variations in specifications.
  • SIP41108DR-GE3: This is a P-Channel MOSFET from Vishay offering similar characteristics to the SI2319DS-T1-E3.

SI2319DS-T1-E3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 40 V
Id - Continuous Drain Current 3 A Rds On - Drain-Source Resistance 82 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 17 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.25 W
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Brand Vishay Semiconductors
Configuration Single Fall Time 25 ns
Forward Transconductance - Min 7 S Height 1.45 mm
Length 2.9 mm Product Type MOSFET
Rise Time 15 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 25 ns Typical Turn-On Delay Time 7 ns
Width 1.6 mm Part # Aliases SI2319DS-T1-BE3 SI2319DS-E3
Unit Weight 0.000282 oz

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SI2319DS-T1-E3

Surface-mount device in SOT23 package

Inventory:

9,503