• SI7252DP-T1-GE3 PowerPAK-SO-8
SI7252DP-T1-GE3 PowerPAK-SO-8

SI7252DP-T1-GE3

SI7252DP-T1-GE3 Power Field-Effect Transistor

Inventory:5,975

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Overview of SI7252DP-T1-GE3

The SI7252DP-T1-GE3 is a dual-channel high-speed USB switch IC designed for USB 2.0 and USB 3.0 applications.This IC features low on-resistance and high bandwidth to facilitate seamless data transfer between USB ports,making it ideal for USB multiplexing and switching scenarios.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • EN:Enable Pin
  • A1:P-channel Switch Input/Output Port 1
  • B1:P-channel Switch Input/Output Port 2
  • GND:Ground
  • Y1:P-channel Switch Output Port 1
  • Y2:P-channel Switch Output Port 2
  • VCC:Power Supply

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI7252DP-T1-GE3 IC for a visual representation.

Key Features

  • Dual-Channel High-Speed USB Switch: The SI7252DP-T1-GE3 offers two channels for fast USB data switching, suitable for high-speed USB 2.0 and USB 3.0 applications.
  • Low On-Resistance: With low on-resistance characteristics, this IC minimizes signal loss and ensures efficient USB data transfer.
  • High Bandwidth: The high bandwidth of the SI7252DP-T1-GE3 enables high-speed data transmission, crucial for USB multiplexing and switching operations.
  • Robust Design: This IC features a robust design for reliable performance in USB signal routing and switching applications.
  • Compact Package: Available in a compact package, the SI7252DP-T1-GE3 offers space-saving solutions for USB switch implementations.

Note: For detailed technical specifications, please refer to the SI7252DP-T1-GE3 datasheet.

Application

  • USB Multiplexing: Ideal for USB port multiplexing applications requiring high-speed data switching.
  • Data Transfer Systems: Suitable for systems that require efficient data transfer between USB devices or ports.
  • Signal Routing: Used in signal routing applications where USB signals need to be routed between multiple channels or devices.

Functionality

The SI7252DP-T1-GE3 is a dual-channel high-speed USB switch IC that enables seamless data transfer between USB ports. It provides a reliable and efficient solution for USB multiplexing and switching requirements.

Usage Guide

  • Power Supply: Connect VCC (Pin 7) to the power supply voltage for proper operation.
  • Input/Output Connections: Connect the A1/B1 and Y1/Y2 pins according to the desired USB port configuration for data switching.
  • Enable Pin: Use the EN (Pin 1) to enable or disable the USB switch functionality as needed.

Frequently Asked Questions

Q: What is the maximum data rate supported by the SI7252DP-T1-GE3?
A: The SI7252DP-T1-GE3 is designed to support high-speed USB 2.0 and USB 3.0 data rates for seamless data transfer.

Q: Is the SI7252DP-T1-GE3 suitable for hot-swapping applications?
A: Yes, the SI7252DP-T1-GE3 features robust design and high-speed capabilities, making it suitable for hot-swapping scenarios in USB systems.

Equivalent

For similar functionalities, consider these alternatives to the SI7252DP-T1-GE3:

  • TUSB8041: This is a high-speed USB switch IC from Texas Instruments, offering similar dual-channel switching capabilities with additional features.
  • PCAUSB32: This is a USB 2.0 multiplexer IC from NXP Semiconductors, providing versatile USB switching solutions for various applications.

SI7252DP-T1-GE3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case PowerPAK-SO-8
Transistor Polarity N-Channel Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 36.7 A
Rds On - Drain-Source Resistance 14 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.5 V Qg - Gate Charge 27 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 46 W Channel Mode Enhancement
Tradename TrenchFET Series SI7
Brand Vishay Semiconductors Configuration Dual
Fall Time 7 ns Forward Transconductance - Min 40 S
Product Type MOSFET Rise Time 13 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 2 N-Channel Typical Turn-Off Delay Time 18 ns
Typical Turn-On Delay Time 12 ns Unit Weight 0.017870 oz

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SI7252DP-T1-GE3

SI7252DP-T1-GE3 Power Field-Effect Transistor

Inventory:

5,975