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IRG7PH50UPBF

N-Channel Insulated Gate Bipolar Transistor capable of handling currents up to 140A and voltages up to 1200V

Inventory:8,298

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Overview of IRG7PH50UPBF

IGBT Trench 1200 V 140 A 556 W Through Hole TO-247AC

Key Features

  • Low VCE(ON) and switching losses
  • 10µs Short Circuit SOA
  • Square RBSOA
  • Maximum Junction Temperature 150°C
  • Positive VCE (ON) Temperature Coefficient
  • Benefits
  • High efficiency in a Wide Range of Applications
  • Increased Reliability
  • Excellent Current Sharing in Parallel Operation
  • Rugged Transient Performance

Application

POWER CONTROL

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tube Product Status Obsolete
IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 140 A Current - Collector Pulsed (Icm) 150 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A Power - Max 556 W
Switching Energy 3.6mJ (on), 2.2mJ (off) Input Type Standard
Gate Charge 290 nC Td (on/off) @ 25°C 35ns/430ns
Test Condition 600V, 50A, 5Ohm, 15V Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Package / Case TO-247-3
Supplier Device Package TO-247AC Base Product Number IRG7PH

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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