TO-247-3
(1012)
The TO-247-3 package (Transistor Outline 3-lead) offers a robust and reliable packaging solution for high-power transistors in advanced electronic systems. Designed for efficient heat dissipation and durability, this 3-lead configuration is ideal for demanding applications in power supplies, motor drives, and industrial electronics.
| Part Number | Description | Manufacturers | Inventory | Add To Bom |
|---|---|---|---|---|
| IRFP460PBF | N-channel MOSFET,IRFP460 20A 500V | Vishay | 7,082 | |
| IDW20G65C5 | Product IDW20G65C5 is a ROHS compliant 20A Schottky Barrier Diode with a voltage rating of 650V and a forward voltage drop of 1.5V at 10A | INFINEON | 7,274 | |
| IPW65R110CFD | Infineon IPW65R110CFD N-channel MOSFET Transistor, 31.2 A, 700 V, 3-Pin TO-247 | INFINEON | 6,563 | |
| SPW35N60C3 | Infineon SPW35N60C3 N-channel MOSFET Transistor, 34.6 A, 650 V, 3-Pin TO-247 | Infineon Technologies | 6,772 | |
| SIHG47N60E-GE3 | Unipolar N-MOSFET transistor with a voltage rating of 600V and a current rating of 30A | Vishay | 7,937 | |
| IRFP264PBF | Siliconix through-hole MOSFET | Vishay | 8,273 | |
| FDH5500 | Description of product FDH5500: 55 volts, 75 amperes, with a 7 milliohm resistance at 75 amperes | Onsemi | 7,901 | |
| FGH80N60FDTU | Product FGH80N60FDTU: N-channel 600V 80A Trans IGBT Chip, TO-247 Package, 290W Power Dissipation | Onsemi | 5,536 | |
| IRFP460LCPBF | The IRFP460LCPBF is a TO-247AC-3 package MOSFET that complies with RoHS regulations | Vishay | 3,802 | |
| IXFX120N20 | 200V, 120A MOSFET | Littelfuse | 7,831 | |
| RFG60P06E | Suitable for power applications | onsemi | 7,168 | |
| HGTG20N60A4 | Insulated Gate Bipolar Transistor, 600V, SMPS | Onsemi | 7,501 | |
| IRFP054NPBF | MOSFET N-Channel 55V 81A TO247AC International Rectifier IRFP054NPBF N-channel MOSFET Transistor, 81 A, 55 V, 3-Pin TO-247AC | Infineon Technologies | 8,096 | |
| IXFH44N50P | 44A, 500V N-channel transistor with TO-247AD packaging | Littelfuse | 6,837 | |
| IXFH88N30P | TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current | Littelfuse | 6,158 | |
| IXFX48N50Q | Transistor MOSFET, N-Type, Capable of Handling 500 Volts and 48 Amps, Encased in TO-247 Package | Littelfuse | 9,645 | |
| MJW21196 | Compact TO-package ensures reliable performance and easy installatio | Onsemi | 9,795 | |
| STW20NM60FD | TO247 Transistor 214W | ST | 8,567 | |
| TIP3055 | Trans GP BJT NPN 60V 15A 90000mW 3-Pin(3+Tab) TO-247 Tube | ST | 4,808 | |
| IXKR25N80C | Three-pin N-channel MOSFET with 800V and 25A rating | IXYS | 4,268 | |
| FGH40N60UFD | High-power transistor for industrial applicatio | Onsemi | 4,423 | |
| HGTG12N60A4D | Low power dissipation | Onsemi | 5,035 | |
| STW18NK80Z | Product Description: Transistor MOSFET N-Channel 800 Volts 19 Amps 3-Pin TO-247 Tube | Stmicroelectronics | 6,139 | |
| DSSK60-02A | A Schottky rectifying diode suitable for Through-Hole Technology (THT) mounting | Ixys | 7,830 | |
| IHW30N160R2 | 600V, 60A current | Infineon | 9,692 | |
| RGTH60TS65DGC11 | 50V 30A power transistors | Rohm Semiconductor | 6,270 | |
| IXFR24N50Q | MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23 | Ixys Corporation | 9,864 | |
| KSF30F60B | TO-247 Diodes: Versatile Power and Switching Components, 600V 30A | KYOCERA Corporation | 8,848 | |
| MSC050SDA120B | SiC SBD 1200V 50A TO-247 Schottky diodes and rectifiers | Microchip Technology | 5,864 | |
| C5D50065D | High current rating of 100A | WOLFSPEED, INC | 7,791 | |
| FDH27N50 | N-Channel MOSFET with 500V voltage rating and 27A current capability | onsemi | 5,587 | |
| APT10078BLLG | TO-247 packaged MOSFET with 1000V voltage capability | Microchip Technology | 7,107 | |
| APT60N60BCSG | Power Field-Effect Transistor, 60A I(D), 600V, 0.045ohm | Microchip Technology | 5,332 | |
| APT38N60BC6 | APT38N60BC6 is a high-voltage N-channel MOSFET with a unipolar structure, designed to handle up to 600V and 24A of current | Microchip Technology | 7,274 | |
| TK090N65Z | Featuring N-channel silicon technology | Toshiba | 6,881 | |
| RFG50N05 | 22mΩ resistance at 50A, 10V power dissipation of 132W | L3 Harris Narda-Miteq | 6,767 | |
| TIP35CG | TIP35CG is a 25A | onsemi | 5,894 | |
| TIP33CG | TIP33CG model identifier | onsemi | 6,170 | |
| TIP3055G | NPN transistor with a 15 A capacity and a 60 V dc rating | onsemi | 6,824 | |
| BDV64BG | BDV64BG - 10A, 100V PNP Darlington Bipolar Power Transistor | onsemi | 5,421 | |
| MJH11020G | Bipolar power transistor capable of handling 20 amps and 200 volts | onsemi | 9,003 | |
| HUF75343G3 | TO-247 package MOSFET with 270W power dissipation | onsemi | 5,208 | |
| IRG7PH46UPBF | Trans IGBT Chip N-CH 1200V 130A 469W 3-Pin(3+Tab) TO-247AC Tube | Infineon Technologies | 7,344 | |
| IRG7PH50UPBF | N-Channel Insulated Gate Bipolar Transistor capable of handling currents up to 140A and voltages up to 1200V | Infineon Technologies | 8,298 | |
| IRG4PC30WPBF | IGBT Transistors Ideal for High Frequency Power Conversion | Infineon Technologies | 7,456 | |
| IPW90R500C3 | Infineon IPW90R500C3 MOSFET Transistor | INFINEON | 6,870 | |
| IRG4PC30UPBF | N-Channel Insulated Gate Bipolar Transistor (IGBT) known as IRG4PC30UPBF | Infineon Technologies | 6,813 | |
| IRG7PH42UPBF | IRG7PH42UPBF Details: N-Channel Transistor IGBT Chip, 1200 Volts, 90 Amps, 385 Milliwatts, TO-247AC Tube | Infineon Technologies | 8,933 | |
| IXGH30N60C2D1 | 00V IGBT Transistors rated at 30 Amps with 2.7V Rds | IXYS | 5,764 | |
| UJ4C075060K3S | 750-volt SiC FET with a power rating of 58 milliwatts | Qorvo | 6,511 |