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C2M0025120D

Silicon Carbide (SiC) N-Channel MOSFET with 1.2KV Voltage Rating and 63A Current, TO-247 Package

Quantity Unit Price(USD) Ext. Price
1 $41.951 $41.95
30 $40.203 $1,206.09

Inventory:6,293

*The price is for reference only.
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Overview of C2M0025120D

The C2M0025120D is a silicon carbide power MOSFET that offers high performance and efficiency in power electronics applications. It is designed to handle high blocking voltages and high switching frequencies, making it ideal for power conversion and motor control systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • VSS: Substrate Connection
  • VDD: Positive Power Supply
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the C2M0025120D MOSFET for a clear visual representation.

Key Features

  • Silicon Carbide Technology: Utilizes SiC technology for improved performance and efficiency compared to traditional silicon-based MOSFETs.
  • High Switching Frequency: Capable of operating at high switching frequencies for optimized power conversion applications.
  • High Voltage Capability: Withstands high blocking voltages, making it suitable for high voltage power electronics systems.
  • Low ON-Resistance: Provides low ON-resistance for reduced conduction losses and improved efficiency.
  • Temperature Resilience: Exhibits resilience to high temperatures, allowing for reliable operation in various environments.

Note: For detailed technical specifications, please refer to the C2M0025120D datasheet.

Application

  • Power Conversion Systems: Suitable for use in power inverters, motor drives, and other power conversion applications.
  • Solar Power Systems: Ideal for inverters and converters in solar power generation systems.
  • Electric Vehicle Charging: Used in electric vehicle chargers and power control units for efficient charging.

Functionality

The C2M0025120D silicon carbide MOSFET provides high-performance power switching capabilities for efficient power conversion and motor control applications.

Usage Guide

  • Gate Control: Apply appropriate gate voltage for switching operations.
  • Power Supply: Connect VDD (Positive Power Supply) and VSS (Substrate Connection) to the power sources accordingly.
  • Heat Management: Ensure proper heat sinking and thermal management for optimal performance.

Frequently Asked Questions

Q: Is the C2M0025120D suitable for high-frequency switching applications?
A: Yes, the C2M0025120D is designed for high switching frequencies, making it suitable for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the C2M0025120D:

  • SiHP065N60E: Silicon carbide MOSFET offering comparable performance and efficiency.
  • STPSC2006CW: SiC Schottky Diode with similar characteristics for power electronics applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology SiC
Mounting Style Through Hole Package / Case TO-247-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 1.2 kV Id - Continuous Drain Current 90 A
Rds On - Drain-Source Resistance 25 mOhms Vgs - Gate-Source Voltage - 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 406 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 463 W Channel Mode Enhancement
Brand Wolfspeed Configuration Single
Fall Time 28.4 ns Forward Transconductance - Min 23.6 S
Height 21.1 mm Length 5.21 mm
Product Power MOSFETs Product Type MOSFET
Rise Time 31.6 ns Factory Pack Quantity 30
Subcategory MOSFETs Transistor Type 1 N-Channel
Type Silicon Carbide Power MOSFET Typical Turn-Off Delay Time 28.8 ns
Typical Turn-On Delay Time 14.4 ns Width 16.13 mm
Unit Weight 0.211644 oz

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