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C2M1000170J

MOSFET made of SiC with a RDS ON value of 1 Ohm and a high voltage capability of 1700V

Inventory:5,239

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Overview of C2M1000170J

The innovative design of the C2M1000170J power control module by Cree leverages the benefits of silicon carbide technology to deliver exceptional performance. Its high thermal conductivity allows for efficient heat dissipation, ensuring stable operation even at high temperatures. With lower switching losses and improved energy efficiency, this module offers a reliable solution for demanding power management applications

Key Features

  • C2M1000170J is a high power N-channel enhancement mode MOSFET
  • It has a drain-source voltage rating of 600V
  • The maximum drain current is 96A
  • It has a low on-resistance of 0.017 ohms
  • Designed for high power applications requiring high efficiency
  • RoHS compliant and suitable for lead-free soldering processes

Application

  • Signal amplification
  • Satellite communications
  • Radar systems
  • Wireless infrastructure
  • Test and measurement equipment
  • Industrial applications
  • Medical devices
  • Power amplifiers
  • Electronic warfare systems
  • Microwave transceivers

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology SiC Mounting Style SMD/SMT
Package / Case TO-263-7 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 1.7 kV
Id - Continuous Drain Current 5.3 A Rds On - Drain-Source Resistance 1 Ohms
Vgs - Gate-Source Voltage - 10 V, + 25 V Vgs th - Gate-Source Threshold Voltage 3.1 V
Qg - Gate Charge 13 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 78 W
Channel Mode Enhancement Brand Wolfspeed
Configuration Single Fall Time 40.4 ns
Height 4.435 mm Length 10.18 mm
Moisture Sensitive Yes Product Type MOSFET
Rise Time 4.8 ns Factory Pack Quantity 50
Subcategory MOSFETs Typical Turn-Off Delay Time 10.8 ns
Typical Turn-On Delay Time 4 ns Width 9.075 mm
Unit Weight 0.056438 oz

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