C2M1000170J
MOSFET made of SiC with a RDS ON value of 1 Ohm and a high voltage capability of 1700V
Inventory:5,239
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
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Part Number : C2M1000170J
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Package/Case : TO-263-7
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Brands : Wolfspeed, Inc.
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Components Categories : Single FETs, MOSFETs
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Datesheet : C2M1000170J DataSheet (PDF)
Overview of C2M1000170J
The innovative design of the C2M1000170J power control module by Cree leverages the benefits of silicon carbide technology to deliver exceptional performance. Its high thermal conductivity allows for efficient heat dissipation, ensuring stable operation even at high temperatures. With lower switching losses and improved energy efficiency, this module offers a reliable solution for demanding power management applications
Key Features
- C2M1000170J is a high power N-channel enhancement mode MOSFET
- It has a drain-source voltage rating of 600V
- The maximum drain current is 96A
- It has a low on-resistance of 0.017 ohms
- Designed for high power applications requiring high efficiency
- RoHS compliant and suitable for lead-free soldering processes
Application
- Signal amplification
- Satellite communications
- Radar systems
- Wireless infrastructure
- Test and measurement equipment
- Industrial applications
- Medical devices
- Power amplifiers
- Electronic warfare systems
- Microwave transceivers
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | SiC | Mounting Style | SMD/SMT |
Package / Case | TO-263-7 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 1.7 kV |
Id - Continuous Drain Current | 5.3 A | Rds On - Drain-Source Resistance | 1 Ohms |
Vgs - Gate-Source Voltage | - 10 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 3.1 V |
Qg - Gate Charge | 13 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 78 W |
Channel Mode | Enhancement | Brand | Wolfspeed |
Configuration | Single | Fall Time | 40.4 ns |
Height | 4.435 mm | Length | 10.18 mm |
Moisture Sensitive | Yes | Product Type | MOSFET |
Rise Time | 4.8 ns | Factory Pack Quantity | 50 |
Subcategory | MOSFETs | Typical Turn-Off Delay Time | 10.8 ns |
Typical Turn-On Delay Time | 4 ns | Width | 9.075 mm |
Unit Weight | 0.056438 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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