TO247-3
(397)
The TO-247-3 (Transistor Outline 247-3) offers a robust and reliable packaging solution for power semiconductor devices in various electronic systems. With its 3-lead configuration and efficient thermal design, this package is well-suited for high-power applications in industries such as automotive, industrial, and renewable energy.
| Part Number | Description | Manufacturers | Inventory | Add To Bom |
|---|---|---|---|---|
| IRFP4310ZPBF | TO-247AC packaged N-Channel MOSFET suitable for use in a variety of high-power electronic circuit designs | Infineon Technologies | 7,898 | |
| IRFP450PBF | MOSFET designed with a planar structure for voltages greater than or equal to 100V | Siliconix | 7,374 | |
| IRG4PH50UPBF | IRG4PH50UPBF by International Rectifier | Infineon Technologies | 8,606 | |
| IRFP7530PBF | Tube Packaged N-Channel Silicon MOSFET, Suitable for High Power Applications with 60V Voltage Rating and 281A Maximum Current Rating | Infineon Technologies | 5,552 | |
| SIHG20N50C-E3 | This N-channel TO-247AC-3 MOSFET, SIHG20N50C-E3, complies with the RoHS directive, ensuring environmental friendliness | Siliconix | 4,407 | |
| IXTX200N10L2 | High-power N-channel MOSFET with 3-pin configuration and isolated tab | Ixys Integrated Circuits Division | 9,676 | |
| IXCH36N250 | 2500V N-Channel Insulated Gate Bipolar Transistor (IGBT) Chip, 73A, 595W, TO-247 Package | Ixys Integrated Circuits Division | 300 | |
| 60APU02PBF | Rectifiers rated for 200 volts and 60 amps | Siliconix | 9,061 | |
| IHW30N135R3 | 0N135R3, "IGBT Transistors IGBT PRODUCTS TrenchStop RC": | Infineon Technologies | 7,125 | |
| APT50GN60BG | APT50GN60BG is a Field Stop IGBT with ultra low VCE(ON) that operates at 600V | Microchip Technology | 7,799 | |
| IHW20N135R3 | Tube TO-247 Trans IGBT Chip N-CH 1350V 40A 310W 3-Pin(3+Tab) | Infineon Technologies | 5,863 | |
| HGTG20N60C3 | HGTG20N60C3 is an Insulated Gate Bipolar Transistor used in electronic devices | onsemi | 5,310 | |
| IRG4PH50UDPBF | TO-247AC IGBT Chip Transistor with 1.2K Volt | Infineon Technologies | 6,347 | |
| IXFH15N80 | effect transistor 15a id 800v 0.6ohm 1-element n-channel silicon metal-oxide semiconductor fet to-247ad to-247ad 3 pin | Littelfuse | 6,579 | |
| C3M0280090D | MOSFET G3 featuring Silicon Carbide technology, rated for 900V with 280mOhm resistance | WOLFSPEED, INC | 9,145 | |
| VS-80CPQ150-N3 | 0A Standard Diode Array | Vishay | 5,927 | |
| IRFP460BPBF | IRFP460BPBF MOSFET designed for efficient power switching and amplification tasks | Vishay | 9,174 | |
| IRFPG50PBF | N-channel MOSFET with a current rating of 6.1A and a voltage rating of 1000V | Vishay | 8,140 | |
| IRFPE50PBF | The IRFPE50PBF is a high-performance N-channel MOSFET designed for applications requiring high current and voltage levels | Vishay | 6,099 | |
| IRFP460APBF | The IRFP460APBF is a N-Channel HEXFET MOSFET with a voltage rating of 500V | Vishay | 5,976 | |
| IRFP22N50APBF | N-channel 500V 22A power MOSFET in TO-247AC package | Vishay | 7,392 | |
| MJW21196G | Operating voltage of 250 V | onsemi | 9,032 | |
| FGH20N60SFDTU | IGBT Transistor Component, 600V Voltage Rating, 40A Current Capacity, 165W Power Dissipation, TO-247 Enclosure | onsemi | 8,039 | |
| MJH11022G | With its high power handling capabilities, this transistor is suitable for various applications | onsemi | 9,409 | |
| IPW65R045C7FKSA1 | Specs: N-Channel MOSFET, 650V, 46A, TO247-3 Package, CoolMOS C7 | Infineon Technologies | 6,591 | |
| IPW60R099P7XKSA1 | Power MOSFET featuring N-channel configuration, rated for voltages up to 600V and currents up to 31A, encapsulated in TO-247 packaging | Infineon Technologies | 4,300 | |
| IRFP4229PBF | IRFP4229PBF High-Voltage N-Channel MOSFET TO-247AC | Infineon Technologies | 5,466 | |
| IRFP4710PBF | N-channel power MOSFET with a 100V voltage rating and a maximum continuous drain current of 72A, packaged in a TO-247AC casing | Infineon Technologies | 9,195 | |
| IRGP4063DPBF | N-Channel 600V 96A 330W | Infineon Technologies | 9,910 | |
| IKW75N60TFKSA1 | TO-247 Tube Trans IGBT Chip 600V 80A 428W | Infineon Technologies | 6,312 | |
| IRFP150NPBF | channel mosfet transistor to-247ac | Infineon Technologies | 5,582 | |
| APT5017BVFRG | Transistor MOSFET N-channel with 500V rating and 30A current capacity in TO-247 package | Microchip Technology | 7,730 | |
| VS-60CPH03PBF | TO-247AC-encased rectifier diode switch supporting 300V voltage and 60A current, delivering rapid 55ns response for swift switching applications." | Siliconix | 6,372 | |
| 2SK4124 | efficient MOSFET for power applications | Onsemi | 8,374 | |
| 30CPU04 | 4 cpu04pbf reccomended alternatives rectifiers alt844 | Siliconix | 6,605 | |
| 80EPF04 | Rectifier Diode Switching 400V 80A 190ns 3-Pin(3+Tab) TO-247AC | Siliconix | 9,761 | |
| 80EPF06 | Rectifiers with a voltage rating of 600 volts and a current rating of 80 amps | Siliconix | 9,190 | |
| AOK30B135W1 | This IGBT Chip features a power rating of 340W and a maximum voltage of 1350V, making it suitable for demanding electronic systems | Alpha & Omega Semiconductor Inc. | 5,549 | |
| APT14M120B | Powerfully built TO-package for maximum performance and safet | Microchip Technology | 4,578 | |
| APT14M100B | APT14M100B is a MOSFET MOS8 with a voltage handling capability of 1000V and a current rating of 14A, housed in a TO-247 package | Microchip Technology | 7,762 | |
| APT25GP90BDQ1G | RoHS 900V IGBT Transistors FG TO-247 | Microchip Technology | 9,208 | |
| APT30GN60BG | N-Channel Insulated Gate Bipolar Transistor | Microchip Technology | 7,914 | |
| APT30GT60BRDQ2G | Three-pin TO-247 package with tab | Microchip Technology | 6,571 | |
| APT30GT60BRG | NPT Standard Speed Insulated Gate Bipolar Transistor - APT30GT60BRG | Microchip Technology | 5,127 | |
| APT33GF120BRG | 1200V Non-Punch-Thru IGBT APT33GF120BRG | Microchip Technology | 6,535 | |
| APT45GP120BG | Trans IGBT Chip N-CH 1200V 100A 625W 3-Pin(3+Tab) TO-247 Tube | Microchip Technology | 9,666 | |
| APT47N60BC3G | channel transistor, high voltage semiconductor, TO-247 package | Microchip Technology | 5,632 | |
| APT5020BVFRG | The APT5020BVFRG MOSFET is an N-channel device in TO-247-3 package, compliant with ROHS standards | Microchip Technology | 9,785 | |
| APT50GN60BDQ2G | N-Channel Insulated Gate Bipolar Transistor | Microchip Technology | 5,080 | |
| APT65GP60L2DQ2G | Advanced IGBT Technology | Microchip Technology | 7,967 |