• STE26NA90 ISOTOP-4
  • STE26NA90 ISOTOP-4
STE26NA90 ISOTOP-4
STE26NA90 ISOTOP-4

STE26NA90

Field-Effect Transistor with Power Capability, N-Channel, Silicon MOSFET, 26A Current, 900V Voltage, 0.3ohm Resistance

Inventory:5,863

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Overview of STE26NA90

The STE26NA90 is a N-channel Power MOSFET designed for high-power switching applications. It features a low on-state resistance and high current capability, making it suitable for use in power electronics and motor control systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • G: Gate
  • D: Drain
  • S: Source
  • G: Gate
  • D: Drain
  • S: Source
  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the STE26NA90 MOSFET for a visual representation.

Key Features

  • High Power Switching: The STE26NA90 is capable of handling high power levels, making it suitable for switching applications.
  • Low On-State Resistance: With its low RDS(on), this MOSFET minimizes power dissipation and improves efficiency.
  • High Current Capability: The device can carry significant current, ideal for motor control and power distribution systems.
  • Fast Switching Speed: The STE26NA90 offers fast turn-on and turn-off times, enhancing switching performance.
  • Robust Construction: Designed for reliability, the MOSFET can operate in demanding environments.

Note: For detailed technical specifications, please refer to the STE26NA90 datasheet.

Application

  • Power Electronics: Ideal for use in power supplies, inverters, and converters.
  • Motor Control: Suitable for motor drive applications in industries such as robotics and automotive.
  • Switching Circuits: Used in various high-power switching circuits for efficient energy control.

Functionality

The STE26NA90 MOSFET is designed for high-power switching operations, offering low resistance and high efficiency in power applications.

Usage Guide

  • Gate Connection: Connect the gate pin to the driving circuit for proper control of the MOSFET.
  • Drain Connection: Connect the load to the drain terminal for power switching operations.
  • Source Connection: Connect the source pin to the common ground reference.

Frequently Asked Questions

Q: Is the STE26NA90 suitable for high-frequency switching applications?
A: Yes, the STE26NA90 offers fast switching speeds, making it suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the STE26NA90:

  • IRF3205: A popular N-channel MOSFET with similar power handling capabilities.
  • FDP8878: This MOSFET offers comparable performance to the STE26NA90 in power switching applications.

STE26NA90

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Package / Case ISOTOP-4
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 900 V Id - Continuous Drain Current 26 A
Rds On - Drain-Source Resistance 300 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 450 W Channel Mode Enhancement
Brand STMicroelectronics Configuration Single
Fall Time 25 ns Height 9.1 mm
Length 38.2 mm Product Type MOSFET
Rise Time 52 ns Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-On Delay Time 40 ns
Width 25.5 mm Unit Weight 1 oz

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STE26NA90

Field-Effect Transistor with Power Capability, N-Channel, Silicon MOSFET, 26A Current, 900V Voltage, 0.3ohm Resistance

Inventory:

5,863