• KST10MTF SOT23-3
KST10MTF SOT23-3

KST10MTF

23 Transistor NPN 25V 350mW RF BJT

Inventory:7,962

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Overview of KST10MTF

The KST10MTF is a high-power NPN bipolar junction transistor (BJT) designed for general electronic applications. It features a maximum collector-emitter voltage of XX volts and a continuous collector current of XX amps, making it suitable for medium to high-power amplification and switching tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram to showcase the connections and usage of the KST10MTF transistor in electronic circuits.

Key Features

  • High-Power BJT: The KST10MTF is designed to handle medium to high-power applications with ease.
  • Low Saturation Voltage: This transistor has a low saturation voltage, reducing power dissipation during switching operations.
  • Wide Voltage and Current Range: With a maximum Vce of XX volts and Ic of XX amps, it can be used in various electronic designs.
  • Gain Bandwidth Product: The KST10MTF offers a high gain bandwidth product, making it suitable for amplification tasks.

Note: For detailed technical specifications, please refer to the KST10MTF datasheet.

Application

  • Power Amplification: Ideal for power amplification in audio and other medium to high-power circuits.
  • Switching Circuits: Suited for switching applications where high current and voltage capabilities are required.
  • Pulse Circuits: Used in pulse circuits for generating high-power pulses in electronic systems.

Functionality

The KST10MTF NPN transistor is a robust component for power amplification and switching applications in various electronic circuits. Its high-power handling capability and low saturation voltage make it a versatile choice for electronic design.

Usage Guide

  • Pin Connections: Connect the Emitter, Base, and Collector pins as per the circuit requirements and transistor configuration.
  • Voltage and Current Limitations: Adhere to the maximum voltage and current limitations specified in the datasheet for safe operation.
  • Biasing: Properly bias the transistor using appropriate resistors and voltage levels for optimal performance.

Frequently Asked Questions

Q: Can the KST10MTF be used in high-frequency applications?
A: The KST10MTF's gain bandwidth product makes it suitable for medium to high-frequency applications within its specified limits.

Equivalent

When considering alternatives to the KST10MTF, explore these similar transistor options:

  • BC337: A versatile NPN transistor with general-purpose applications and moderate power handling capability.
  • 2N3055: A high-power NPN BJT commonly used in power amplification circuits and voltage regulation applications.

KST10MTF

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SOT-23-3 Case Outline 318-08
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target N Polarity NPN
VCEO(sus) Min (V) 25 hFE Min 60
PTM Max (W) 1 fT Min (MHz) 650
Pricing ($/Unit) $0.0224Sample

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KST10MTF

23 Transistor NPN 25V 350mW RF BJT

Inventory:

7,962