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SPA11N65C3

Infineon SPA11N65C3 N-channel MOSFET Transistor, 11 A, 650 V, 3+Tab-Pin TO-220FP

Quantity Unit Price(USD) Ext. Price
1 $2.977 $2.98
10 $2.596 $25.96
50 $2.370 $118.50
100 $2.140 $214.00
500 $2.034 $1,017.00
1000 $1.987 $1,987.00

Inventory:3,724

*The price is for reference only.
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Overview of SPA11N65C3

Meet the SPA11N65C3, a cutting-edge Power Field-Effect Transistor engineered for high-speed switching and power amplification tasks. Featuring a single N-Channel design and Metal-oxide Semiconductor technology, this robust MOSFET delivers exceptional performance with a low on-resistance of 0.38ohm and maximum reliability. The TO-220AB package ensures easy integration into existing circuit designs, while the green plastic housing adds a touch of environmental consciousness to the component. Whether used in consumer electronics or industrial machinery, the SPA11N65C3's 3-pin TO-220FP setup provides a versatile solution for diverse application requirements

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid SPA11N65C3 Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3 Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Samacsys Manufacturer Infineon Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 340 mJ Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 650 V
Drain Current-Max (Abs) (ID) 11 A Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.38 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
JESD-609 Code e3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 33 W
Pulsed Drain Current-Max (IDM) 33 A Qualification Status Not Qualified
Surface Mount NO Terminal Finish TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON
Manufacturer Infineon Product Category MOSFET
RoHS Details Technology Si
Mounting Style Through Hole Package / Case TO-220FP-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V Id - Continuous Drain Current 11 A
Rds On - Drain-Source Resistance 380 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 3.9 V Qg - Gate Charge 45 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 33 W Channel Mode Enhancement
Tradename CoolMOS Series CoolMOS C3
Brand Infineon Technologies Fall Time 5 ns
Height 16.15 mm Length 10.65 mm
Product Type MOSFET Rise Time 5 ns
Factory Pack Quantity 500 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 44 ns
Typical Turn-On Delay Time 10 ns Width 4.85 mm
Part # Aliases SPA11N65C3XK SP000216318 SPA11N65C3XKSA1 Unit Weight 0.068784 oz

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