SPD02N80C3
Infineon SPD02N80C3 N-channel MOSFET Transistor, 2 A, 800 V, 3-Pin TO-252
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $3.560 | $3.56 |
10 | $3.157 | $31.57 |
30 | $2.918 | $87.54 |
100 | $2.676 | $267.60 |
500 | $2.565 | $1,282.50 |
1000 | $2.514 | $2,514.00 |
Inventory:5,111
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Part Number : SPD02N80C3
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Other Name : SPD02N80C3BTMA1
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Package/Case : TO-252-3
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Manufacturer : INFINEON
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Components Classification : Single FETs, MOSFETs
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Datesheet : SPD02N80C3 DataSheet (PDF)
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Series : SPD02N
Overview of SPD02N80C3
The SPD02N80C3 is a MOSFET optimized for low specific on-state resistance, very low energy storage in output capacitance, low gate charge, and field-proven CoolMOS™ quality. It provides excellent performance for power supplies, motor control, lighting applications, renewable energy systems, industrial equipment, automotive electronics, and switch mode power supplies.
Pinout
The SPD02N80C3 pinout refers to the configuration and function of each pin in its DPAK-3 (TO-252-3) package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the SPD02N80C3 has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.
Features
- Low specific on-state resistance (RDS(on)*A): This feature enables efficient power conversion and minimizes energy losses.
- Very low energy storage in output capacitance (Eoss) @400V: This reduces the overall size of the component and improves its performance.
- Low gate charge (Qg): This feature enables faster switching times and improved system responsiveness.
- Field-proven CoolMOS™ quality: This ensures high reliability and long lifespan for the component.
- CoolMOS™ technology has been manufactured by Infineon since 1998: This demonstrates the company's commitment to producing high-quality MOSFETs.
- High efficiency and power density: This feature enables compact designs with minimal energy losses.
- Outstanding cost/performance: This ensures that the component provides excellent value for its price.
- High reliability: This feature guarantees a long lifespan and low failure rates for the component.
- Ease-of-use: This makes it easy to integrate the component into a circuit and reduces design complexity.
Applications
- Power supplies: The SPD02N80C3 is suitable for use in power supply applications where high efficiency and low energy losses are required.
- Motor control: This component can be used to control motors efficiently, reducing energy consumption and heat generation.
- Lighting applications: The SPD02N80C3 is suitable for use in lighting applications where high power density and low energy losses are required.
- Renewable energy systems: This component can be used to control the flow of energy from renewable sources, such as solar or wind power.
- Industrial equipment: The SPD02N80C3 is suitable for use in industrial equipment where high reliability and low maintenance are required.
- Automotive electronics: This component can be used to control the flow of energy in automotive systems, such as electric vehicles or hybrid vehicles.
- Switch mode power supplies: The SPD02N80C3 is suitable for use in switch mode power supplies where high efficiency and low energy losses are required.
Equivalents
The SPD02N80C3 is equivalent to other MOSFETs that provide similar performance, reliability, and ease-of-use. However, this component has the unique advantage of being manufactured by Infineon using CoolMOS™ technology.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | SPD02N80C3 | Pbfree Code | Yes |
Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Part Package Code | TO-252AA |
Package Description | GREEN, PLASTIC, TO-252, 2/3 PIN | Pin Count | 4 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Samacsys Manufacturer | Infineon | Additional Feature | AVALANCHE RATED, HIGH VOLTAGE |
Avalanche Energy Rating (Eas) | 90 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 800 V |
Drain Current-Max (Abs) (ID) | 2 A | Drain Current-Max (ID) | 2 A |
Drain-source On Resistance-Max | 2.7 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-252AA | JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 42 W |
Pulsed Drain Current-Max (IDM) | 6 A | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | TIN |
Terminal Form | GULL WING | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
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