MJW21195
Bipolar Transistors - BJT 16A 250V 200W PNP
Inventory:9,287
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- 365 Days Quality Guarantee
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Part Number : MJW21195
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Package/Case : TO-247-3
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Brands : Onsemi
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Components Categories : Bipolar Transistors - BJT
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Datesheet : MJW21195 DataSheet (PDF)
Overview of MJW21195
The MJW21196 NPN Bipolar Complementary Audio Power Transistor utilizes Perforated Emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.
Key Features
- Total Harmonic Distortion Characterized
- High DC Current Gain –hFE = 20 Min @ IC = 8 Adc
- Excellent Gain Linearity
- High SOA: 2.25 A, 80 V, 1 Second
- Pb-Free Packages are Available
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | Bipolar Transistors - BJT | RoHS | N |
Mounting Style | Through Hole | Package / Case | TO-247-3 |
Transistor Polarity | PNP | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 250 V | Collector- Base Voltage VCBO | 400 V |
Emitter- Base Voltage VEBO | 5 V | Collector-Emitter Saturation Voltage | 1 V |
Maximum DC Collector Current | 16 A | Pd - Power Dissipation | 200 W |
Gain Bandwidth Product fT | 4 MHz | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 150 C | Brand | onsemi |
Continuous Collector Current | 16 A | DC Collector/Base Gain hfe Min | 20 |
Height | 21.08 mm | Length | 16.26 mm |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 30 |
Subcategory | Transistors | Technology | Si |
Width | 5.3 mm | Unit Weight | 1.340411 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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