• MJE18004G TO-220-3
MJE18004G TO-220-3

MJE18004G

Characteristics of this bipolar transistor include a high voltage and power rating, as well as a low current and voltage capability

Inventory:5,973

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Overview of MJE18004G

The MJE18004G is a high-voltage NPN power transistor commonly used in power supply and switching applications. This transistor is designed to handle high power levels and high voltage ratings, making it suitable for various industrial and commercial applications requiring robust transistor performance.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connection and usage of the MJE18004G transistor for a visual reference.

Key Features

  • High Voltage Rating: The MJE18004G can handle high voltage levels, making it suitable for high-power applications.
  • High Power Dissipation: This power transistor has a high power dissipation capability, allowing it to dissipate heat effectively.
  • NPN Configuration: The NPN transistor configuration enables amplification and switching capabilities in electronic circuits.
  • Robust Construction: The MJE18004G is designed with robust materials to withstand high power and voltage stress.

Note: For detailed technical specifications, please refer to the MJE18004G datasheet.

Application

  • Power Supply Systems: Ideal for use in power supply systems requiring high voltage and power handling capabilities.
  • Switching Circuits: Suitable for switching circuits where high power switching is necessary.
  • Industrial Automation: Used in industrial automation systems for power control and regulation.

Functionality

The MJE18004G NPN power transistor is designed to amplify and switch electronic signals in high-power applications. It provides a reliable and efficient solution for power management in various electronic systems.

Usage Guide

  • Mounting: Ensure proper heat sinking when mounting the transistor to dissipate heat effectively.
  • Connection: Connect the emitter, base, and collector pins according to the circuit requirements for desired performance.

Frequently Asked Questions

Q: Is the MJE18004G suitable for high-frequency applications?
A: The MJE18004G is more suitable for high-power applications rather than high-frequency applications due to its power handling capabilities.

Equivalent

For similar functionalities, consider these alternatives to the MJE18004G:

  • MJE13005G: Another high-power NPN transistor offering similar power handling capabilities.
  • MJL21193G: A high-voltage NPN transistor with enhanced performance characteristics compared to the MJE18004G.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type TO-220-3 Case Outline 221A
MSL Type NA MSL Temp (°C) 0
Container Type TUBE Container Qty. 50
ON Target N Polarity NPN
Type General Purpose VCE(sat) Max (V) 0.75
IC Cont. (A) 5 VCEO Min (V) 450
VCBO (V) 1000 VEBO (V) 9
VBE(sat) (V) 0.92 hFE Min 14
hFE Max 34 PTM Max (W) 75
Pricing ($/Unit) $0.5581

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MJE18004G

Characteristics of this bipolar transistor include a high voltage and power rating, as well as a low current and voltage capability

Inventory:

5,973