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IXTT1N250HV

5KV 1.5A N-channel MOSFET

Inventory:4,719

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Overview of IXTT1N250HV

The IXTT1N250HV is a high-voltage, high-speed IGBT designed for power electronic applications requiring efficient switching and high reliability. This IGBT offers a maximum voltage rating of 1200V and is capable of handling high current levels, making it suitable for various power conversion and motor drive applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): Connect to the positive terminal of the power supply
  • Emitter (E): Connected to the load or ground
  • GATE (G): Input for gate control signal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXTT1N250HV IGBT for better understanding.

Key Features

  • High Voltage Rating: Features a maximum voltage rating of 1200V for high-power applications.
  • High-Speed Switching: Offers fast switching times for efficient operation in power electronics.
  • Low Saturation Voltage: Ensures minimal power loss and heat generation during switching.
  • Short-Circuit Ruggedness: Designed to withstand short-circuit conditions for enhanced reliability.
  • Temperature Stability: Maintains performance across a wide temperature range for stable operation.

Note: For detailed technical specifications, please refer to the IXTT1N250HV datasheet.

Application

  • Power Inverters: Suitable for use in power inverters for converting DC to AC power.
  • Motor Drives: Ideal for motor drive applications in industrial systems and appliances.
  • Solar Inverters: Used in solar inverters for efficient power conversion in solar energy systems.

Functionality

The IXTT1N250HV is a high-voltage, high-speed IGBT that enables efficient power switching in various applications, including motor control, inverters, and power supplies. It provides reliable performance under high voltage and current conditions.

Usage Guide

  • Gate Control: Apply appropriate gate voltage to the GATE pin to control the switching of the IGBT.
  • Power Connection: Connect the collector (C) to the positive terminal and the emitter (E) to the load or ground.
  • Heat Management: Ensure proper heat sinking to dissipate heat generated during operation.

Frequently Asked Questions

Q: What is the maximum voltage rating of the IXTT1N250HV?
A: The IXTT1N250HV has a maximum voltage rating of 1200V, making it suitable for high-power applications.

Q: Is the IXTT1N250HV suitable for motor drive applications?
A: Yes, the IXTT1N250HV is ideal for motor drive applications due to its high-speed switching and high current capabilities.

Equivalent

For similar functionalities, consider these alternatives to the IXTT1N250HV:

  • IXYS IXGH20N120A: A high-voltage IGBT with comparable performance characteristics.
  • Infineon IGBTFS75R17E3: This IGBT offers similar high-speed switching capabilities for power electronics applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 2500 Maximum On-Resistance @ 25 ℃ (Ohm) 40
Continuous Drain Current @ 25 ℃ (A) 1.5 Gate Charge (nC) 41
Input Capacitance, CISS (pF) 1660 Thermal resistance [junction-case] (K/W) 0.5
Configuration Single Package Type TO-268HV
Typical Reverse Recovery Time (ns) 2500 Power Dissipation (W) 250
Sample Request Yes Check Stock Yes

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