• IXFX120N20 TO-247-3
IXFX120N20 TO-247-3

IXFX120N20

200V, 120A MOSFET

Quantity Unit Price(USD) Ext. Price
990 $1.517 $1,501.83
510 $1.543 $786.93
210 $1.597 $335.37
1 $3.999 $4.00

Inventory:7,831

*The price is for reference only.
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Overview of IXFX120N20

The IXFX120N20 is a high-speed, high-voltage IGBT (Insulated Gate Bipolar Transistor) designed for power electronic applications. This IGBT features a maximum voltage rating of 200V and a high current capability, making it suitable for various power switching and amplification tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): Current input/output terminal
  • Emitter (E): Ground or common terminal
  • Gate (G): Control terminal for switching the IGBT

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFX120N20 IGBT for a visual representation.

Key Features

  • High Voltage Rating: The IXFX120N20 is rated for a maximum voltage of 200V, suitable for high-power applications.
  • High Current Capability: This IGBT can handle high currents, making it ideal for power amplification and switching.
  • High-Speed Switching: With its fast switching characteristics, the IXFX120N20 ensures efficient power conversion and control.
  • Reliable Performance: Designed for reliability and durability in demanding industrial environments.
  • Integrated Protection Features: Includes built-in protection mechanisms to safeguard the IGBT and connected circuits.

Note: For detailed technical specifications, please refer to the IXFX120N20 datasheet.

Application

  • Power Inverters: Ideal for use in power inverters for converting DC power to AC power.
  • Motor Drives: Suitable for motor drive applications requiring high-voltage switching.
  • Power Supplies: Used in power supply units for voltage regulation and power distribution.

Functionality

The IXFX120N20 IGBT is a versatile semiconductor device that enables efficient power control and amplification in various electronic systems.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the Gate terminal (G) for turning the IGBT on/off.
  • Power Connections: Connect the Collector (C) and Emitter (E) terminals according to the circuit requirements.

Frequently Asked Questions

Q: What is the maximum voltage rating of the IXFX120N20?
A: The IXFX120N20 has a maximum voltage rating of 200V.

Q: Can the IXFX120N20 be used for high-power applications?
A: Yes, the IXFX120N20 is designed for high-power applications that require efficient switching and amplification.

Equivalent

For similar functionalities, consider these alternatives to the IXFX120N20:

  • IXFX90N30: A high-voltage IGBT with a slightly lower voltage rating but similar current capabilities.
  • IXFX150N15: This IGBT offers a higher voltage rating with comparable high-speed switching characteristics.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 200 Maximum On-Resistance @ 25 ℃ (Ohm) 0.017
Continuous Drain Current @ 25 ℃ (A) 120 Gate Charge (nC) 300
Input Capacitance, CISS (pF) 9100 Thermal resistance [junction-case] (K/W) 0.22
Configuration Single Package Type TO-247 PLUS
Power Dissipation (W) 568 Maximum Reverse Recovery (ns) 250
Sample Request No

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