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IXFB110N60P3

600V 110A 1.89kW

Quantity Unit Price(USD) Ext. Price
1000 $7.021 $7,021.00
500 $7.149 $3,574.50
200 $7.409 $1,481.80
1 $19.145 $19.14

Inventory:6,410

*The price is for reference only.
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Overview of IXFB110N60P3

The IXFB110N60P3 is a high-power N-channel MOSFET designed for various power applications.This MOSFET features a low on-state resistance,high current capability,and robust construction,making it ideal for power management and switching purposes.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source
  • B:Body

Circuit Diagram

Include a circuit diagram depicting the connections and operation of the IXFB110N60P3 MOSFET for a clearer understanding of its usage.

Key Features

  • High Power Handling Capacity:The IXFB110N60P3 can handle high power levels,making it suitable for power amplifier and switching applications.
  • Low On-state Resistance:With its low RDS(on),this MOSFET minimizes power losses and heat generation during operation.
  • Fast Switching Speed:This MOSFET offers fast switching times,allowing for efficient power control and regulation.
  • Robust Construction:The IXFB110N60P3 is built to withstand high voltages and currents,ensuring reliable performance in demanding environments.
  • Temperature Stability:With a temperature-stable design,this MOSFET maintains consistent performance across a wide range of operating conditions.

Note:For detailed technical specifications,please refer to the IXFB110N60P3 datasheet.

Application

  • Power Amplification:Suitable for power amplifier circuits requiring high-current handling capabilities.
  • Switching Applications:Perfect for switching operations in power supplies,motor controls,and other electronic systems.
  • Power Management:Used in power management systems to regulate and control power distribution efficiently.

Functionality

The IXFB110N60P3 MOSFET is a high-power N-channel device that offers low on-state resistance and high current handling capacity,making it an excellent choice for power applications requiring efficient power control and handling.

Usage Guide

  • Gate Control:Apply appropriate voltage levels to the gate terminal (G) to control the conductivity of the MOSFET.
  • Connection:Connect the drain (D) and source (S) terminals in the circuit according to the application requirements.

Frequently Asked Questions

Q:Is the IXFB110N60P3 suitable for high-frequency switching applications?
A:Yes,this MOSFET offers fast switching speeds and is suitable for high-frequency switching applications requiring precise power control.

Equivalent

For similar functionalities,consider these alternatives to the IXFB110N60P3:

  • IXFB120N60P3:Another high-power N-channel MOSFET with slightly different specifications and characteristics for specific application needs.
  • IRFP460:This is a power MOSFET device with comparable power handling capabilities and performance characteristics.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 600 Maximum On-Resistance @ 25 ℃ (Ohm) 0.056
Continuous Drain Current @ 25 ℃ (A) 110 Gate Charge (nC) 254
Input Capacitance, CISS (pF) 18000 Thermal resistance [junction-case] (K/W) 0.066
Configuration Single Package Type TO-264 PLUS
Power Dissipation (W) 1890 Maximum Reverse Recovery (ns) 250
Sample Request Yes Check Stock Yes

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