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600V 110A 1.89kW

Quantity Unit Price(USD) Ext. Price
1 $19.332 $19.33
200 $7.482 $1,496.40
500 $7.218 $3,609.00
1000 $7.089 $7,089.00


*The price is for reference only.
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Quick Inquiry

Please submit RFQ for IXFB110N60P3 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of IXFB110N60P3

The IXFB110N60P3 is a high-power, high-speed insulated gate bipolar transistor (IGBT) designed for use in a wide range of applications, particularly in motor control and power conversion systems. It is produced by IXYS Corporation, a leading manufacturer of power semiconductors.The IXFB110N60P3 features a voltage rating of 600V, a current rating of 110A, and a low saturation voltage of 1.7V. It also has a high switching speed, with a specified turn-on time of 80ns and a turn-off time of 80ns. This makes it ideal for high-frequency switching applications.The IGBT is housed in a TO-264 package, which allows for easy mounting and thermal management. The device also has an isolated gate structure, which provides improved electrical isolation and reduces the risk of voltage spikes and other electrical disturbances.

Key Features

  • IXFB110N60P3 is a 600V, 110A IGBT power module with P3 technology
  • It features low thermal resistance, high power density, and higher efficiency
  • The module includes UL certification, pressure contact technology to improve reliability, and integrated temperature sensor
  • It is suitable for motor drives, solar inverters, UPS, and other high-power applications requiring high performance and reliability
  • Application

  • The IXFB110N60P3 is a high-performance, rugged, and reliable MOSFET designed for a wide range of applications including power supplies, motor control, and renewable energy systems
  • Its low on-state resistance and high current capability make it ideal for high-power, high-efficiency applications where reliability and performance are critical
  • Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Drain-Source Voltage (V) 600 Maximum On-Resistance @ 25 ℃ (Ohm) 0.056
    Continuous Drain Current @ 25 ℃ (A) 110 Gate Charge (nC) 254
    Input Capacitance, CISS (pF) 18000 Thermal resistance [junction-case] (K/W) 0.066
    Configuration Single Package Type TO-264 PLUS
    Power Dissipation (W) 1890 Maximum Reverse Recovery (ns) 250
    Sample Request Yes Check Stock Yes

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