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IRG4BC20UPBF

High-speed IGBT transistors rated for 600V in ultrafast switching applications between 8-60kHz

Inventory:5,245

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Overview of IRG4BC20UPBF

IGBT 600 V 13 A 60 W Through Hole TO-220AB

Key Features

The IRF6645PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.The IRF6645PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters. Features:
  • RoHS Compliant
  • Lead-Free (Qualified up to 260°C Reflow)
  • Application Specific MOSFETs
  • Ideal for High Performance Isolated Converter
  • Primary Switch Socket
  • Optimized for Synchronous Rectification
  • Low Conduction Losses
  • High Cdv/dt Immunity
  • Low Profile (<0.7mm)
  • Dual Sided Cooling Compatible
  • Compatible with existing Surface Mount Techniques

    • Application

    • HVAC
    • Consumer Electronics
    • Power Management

    Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Package Tube Product Status Obsolete
    Voltage - Collector Emitter Breakdown (Max) 600 V Current - Collector (Ic) (Max) 13 A
    Current - Collector Pulsed (Icm) 52 A Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 6.5A
    Power - Max 60 W Switching Energy 100µJ (on), 120µJ (off)
    Input Type Standard Gate Charge 27 nC
    Td (on/off) @ 25°C 21ns/86ns Test Condition 480V, 6.5A, 50Ohm, 15V
    Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
    Package / Case TO-220-3 Supplier Device Package TO-220AB

    Warranty & Returns

    Warranty, Returns, and Additional Information

    • QA & Return Policy

      Parts Quality Guarantee: 365 days

      Returns for refund: within 90 days

      Returns for Exchange: within 90 days

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      Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

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