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IRF6645

Trans MOSFET N-CH Si 100V 5.7A 7-Pin Direct-FET SJ T/R

Inventory:3,695

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Overview of IRF6645

Housed in a TO-220AB package, the IRF6645 offers excellent thermal performance and easy mounting on a heatsink for enhanced heat dissipation. This feature allows the transistor to operate efficiently even under high temperature conditions, without the risk of overheating. Additionally, its fast switching speed and low gate charge enable quick on/off transitions, making it suitable for high frequency switching applications

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Mfr Infineon Technologies
Series HEXFET® Package Tube
Product Status Obsolete FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 5.7A (Ta), 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 35mOhm @ 5.7A, 10V Vgs(th) (Max) @ Id 4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 25 V FET Feature -
Power Dissipation (Max) 3W (Ta), 42W (Tc) Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package DIRECTFET™ SJ
Package / Case DirectFET™ Isometric SJ

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