IRLI2910PBF
Power Field-Effect Transistor, 31A I(D), 100V, 0.03ohm
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
100 | $1.901 | $190.10 |
30 | $1.930 | $57.90 |
10 | $1.957 | $19.57 |
1 | $1.997 | $2.00 |
Inventory:4,581
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : IRLI2910PBF
-
Package/Case : TO220-3
-
Manufacturer : Infineon Technologies
-
Components Classification : Single FETs, MOSFETs
-
Datesheet : IRLI2910PBF DataSheet (PDF)
The IRLI2910PBF is a power MOSFET transistor designed for high-power switching applications.This MOSFET features a low on-resistance and high current capacity,making it suitable for use in power electronics circuits. (Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.) Illustrate a circuit diagram showing the connections and usage of the IRLI2910PBF MOSFET for better understanding. Note: For detailed technical specifications, refer to the IRLI2910PBF datasheet. Functionality The IRLI2910PBF power MOSFET transistor is designed to handle high-power switching operations with low on-resistance and high current capacity, ensuring reliable performance in various power applications. Usage Guide Q: Is the IRLI2910PBF suitable for high-frequency applications? For similar functionalities, consider these alternatives to the IRLI2910PBF:Overview of IRLI2910PBF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the fast switching speed of the IRLI2910PBF makes it suitable for high-frequency switching applications.Equivalent

Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | Through Hole |
Package / Case | TO-220-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 27 A | Rds On - Drain-Source Resistance | 40 mOhms |
Vgs - Gate-Source Voltage | - 16 V, + 16 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 93.3 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 48 W |
Channel Mode | Enhancement | Brand | Infineon Technologies |
Configuration | Single | Height | 15.65 mm |
Length | 10 mm | Product Type | MOSFET |
Factory Pack Quantity | 2000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Width | 4.4 mm |
Unit Weight | 0.068784 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy ?
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package ?
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment ?
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

AO8820
High-power device for demanding applications, operating up to V an

BC107B
Bipolar Transistors - BJT NPN 50Vcbo 45Vceo 6.0Vebo 200mA

BD135
Trans GP BJT NPN 45V 1.5A 1250mW 3-Pin(3+Tab) SOT-32 Tube

BD679
High-current, low-voltage amplifier for automotive systems

BS870-7-F
310mW MOSFET for efficient power handling

BSS126H6327XTSA2
SOT23 PNP Transistor with 250x Amplification Factor, 45V VCE and 800mA IC Rating

BUX98A
30A, 450V, NPN, Si, POWER TRANSISTOR, TO-3, TO-3, 2 PIN

IXZ318N50
Silicon N-Channel Metal-oxide Semiconductor FET

TGI1314-50L
TGI1314-50L is a pre-biased bipolar transistor with a matched internal transistor GAN HEMT, designed to operate in the frequency range of 8

2N6327
NPN power transistor with high current handling and voltage tolerance

CM600DU-12NFH
1130W Power Trans IGBT Module

SPP11N65C3
Infineon SPP11N65C3 N-channel MOSFET Transistor

GA200SA60UP
600V N-channel transistor module

IRLI2910PBF
Power Field-Effect Transistor, 31A I(D), 100V, 0.03ohm
Inventory:
4,581
Warranty & Returns
After Sales Service
What after-sales service can be provided?
We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:
·Initiate the request within 90 days after the item's shipment date.
·Coordinate the return or exchange with our team.
·Keep the items in their original condition as delivered.
·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.
Shipping
What channels of transportation of goods does the website support?
We usually send out our orders during business days using FedEx, SF, UPS, or DHL. We're also here to assist with alternative shipping options. Should you require additional information about shipping particulars or expenses, please don't hesitate to get in touch with us.







Package
How to ensure that the parts will be intact during transportation?
The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.




Payment
Which payment methods can be used to pay for goods
Accepted payment methods commonly encompass VISA, MasterCard, UnionPay, Western Union, PayPal, and various other options.
Should you have a particular payment preference or wish to seek information on rates and other specifics, please feel free to reach out to us.




