• IRLI2910PBF TO220-3
IRLI2910PBF TO220-3

IRLI2910PBF

Power Field-Effect Transistor, 31A I(D), 100V, 0.03ohm

Quantity Unit Price(USD) Ext. Price
100 $1.901 $190.10
30 $1.930 $57.90
10 $1.957 $19.57
1 $1.997 $2.00

Inventory:4,581

*The price is for reference only.
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Overview of IRLI2910PBF

The IRLI2910PBF is a power MOSFET transistor designed for high-power switching applications.This MOSFET features a low on-resistance and high current capacity,making it suitable for use in power electronics circuits.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • VSS:Source
  • VDD:Drain
  • VSS:Source

Circuit Diagram

Illustrate a circuit diagram showing the connections and usage of the IRLI2910PBF MOSFET for better understanding.

Key Features

  • Low On-Resistance: The IRLI2910PBF offers a low on-resistance, reducing power losses and improving efficiency in switching applications.
  • High Current Capacity: With its high current-handling capability, this MOSFET can handle large loads in power circuits.
  • Fast Switching Speed: The IRLI2910PBF provides fast switching times, enabling quick operation in high-frequency applications.
  • Enhanced Thermal Performance: Designed for optimized thermal dissipation, ensuring reliable performance under high loads.

Note: For detailed technical specifications, refer to the IRLI2910PBF datasheet.

Application

  • Switching Power Supplies: Ideal for use in power supply circuits to efficiently control the flow of current.
  • Motor Control: Suitable for motor drive applications where high current switching is required.
  • Inverter and Converter Circuits: Used in inverters and converters for converting and controlling electrical energy.

Functionality

The IRLI2910PBF power MOSFET transistor is designed to handle high-power switching operations with low on-resistance and high current capacity, ensuring reliable performance in various power applications.

Usage Guide

  • Gate Control: Apply appropriate gate voltage to control the switching behavior of the MOSFET.
  • Power Connections: Connect the drain and source pins to the power supply according to the circuit requirements.
  • Heat Management: Ensure proper heat sinking or thermal management to maintain the MOSFET within safe operating temperatures.

Frequently Asked Questions

Q: Is the IRLI2910PBF suitable for high-frequency applications?
A: Yes, the fast switching speed of the IRLI2910PBF makes it suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the IRLI2910PBF:

  • IRF1405: A power MOSFET with comparable specifications and performance characteristics.
  • IXFQ110N20T: Another high-power MOSFET suitable for switching applications in power electronics.

IRLI2910PBF

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 27 A Rds On - Drain-Source Resistance 40 mOhms
Vgs - Gate-Source Voltage - 16 V, + 16 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 93.3 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 48 W
Channel Mode Enhancement Brand Infineon Technologies
Configuration Single Height 15.65 mm
Length 10 mm Product Type MOSFET
Factory Pack Quantity 2000 Subcategory MOSFETs
Transistor Type 1 N-Channel Width 4.4 mm
Unit Weight 0.068784 oz

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IRLI2910PBF

Power Field-Effect Transistor, 31A I(D), 100V, 0.03ohm

Inventory:

4,581