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GLS85LD1001T-60-RI-LBTE

SLC (Single Level Cell) technology with 100,000 program/erase cycles, ensuring high durability and reliability

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Overview of GLS85LD1001T-60-RI-LBTE

The GLS85LD1001T-60-RI-LBTE is a high-performance NAND flash memory IC designed for storage applications in various electronic devices. This IC offers a storage capacity of 1GB and operates at a clock speed of 60MHz, providing fast and reliable data storage solutions.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VDD: Power Supply Voltage
  • GND: Ground Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the GLS85LD1001T-60-RI-LBTE IC for a visual representation.

Key Features

  • High Storage Capacity: Offers 1GB of storage space for data-intensive applications.
  • Fast Clock Speed: Operates at 60MHz, providing quick data access and transfer speeds.
  • Reliable Performance: Ensures data integrity and reliability for critical storage needs.
  • Low Power Consumption: Optimized power efficiency for energy-conscious devices.
  • Wide Operating Temperature Range: Suitable for use in various environmental conditions.

Note: For detailed technical specifications, please refer to the GLS85LD1001T-60-RI-LBTE datasheet.

Application

  • Embedded Systems: Ideal for data storage in embedded systems and IoT devices.
  • Consumer Electronics: Suitable for use in smartphones, tablets, and digital cameras for data storage.
  • Industrial Applications: Used in industrial automation and control systems requiring reliable storage solutions.

Functionality

The GLS85LD1001T-60-RI-LBTE NAND flash memory provides high-capacity and high-speed storage capabilities, catering to a wide range of applications that demand reliable data storage.

Usage Guide

  • Power Supply: Connect VDD (Pin 1) to the supply voltage specified in the datasheet.
  • Data Connections: Use DQ0 and DQ1 (Data I/O lines) for data input and output.
  • Control Inputs: Utilize ALE, CE, CLE, WE, and RE pins for addressing and control functions.

Frequently Asked Questions

Q: What is the maximum clock speed supported by the GLS85LD1001T-60-RI-LBTE?
A: The GLS85LD1001T-60-RI-LBTE operates at a maximum clock speed of 60MHz for efficient data transfer.

Q: Is the GLS85LD1001T-60-RI-LBTE compatible with 3.3V power supplies?
A: Yes, the GLS85LD1001T-60-RI-LBTE is compatible with 3.3V power supplies, offering flexibility in voltage requirements.

Equivalent

For similar functionalities, consider these alternatives to the GLS85LD1001T-60-RI-LBTE:

  • GLS85LD2002T-80-RI-LBTE: A higher-capacity NAND flash memory IC with faster clock speeds for enhanced performance.
  • GLS85LD512T-40-RI-LBTE: A lower-capacity NAND flash memory IC with lower clock speeds but optimized for power efficiency.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Managed NAND RoHS Details
Series GLS85LD1001T Type PATA Flash Drive
Memory Size 1 GB Configuration SLC
Sustained Read 30 MB/s Sustained Write 20 MB/s
Operating Supply Voltage 3.3 V Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Dimensions 24 mm x 12 mm x 1.4 mm
Active Mode Current 85 mA Brand Greenliant
Interface Type SATA, IDE Moisture Sensitive Yes
Mounting Style SMD/SMT Package / Case LBGA-91
Product Type Managed NAND Factory Pack Quantity 16
Subcategory Memory & Data Storage Supply Voltage - Max 3.3 V
Supply Voltage - Min 3.3 V Tradename NANDrive
Unit Weight 1.397 lbs

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