• S29GL01GS11DHIV20 FBGA-64


9GL01GS11DHIV20 with pbga64 interface and 128mx8 configuration


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Overview of S29GL01GS11DHIV20

The S29GL01GS11DHIV20 is a 1 Gbit NAND Flash memory chip designed for high-performance storage applications. It offers a fast data transfer rate and high capacity, suitable for various embedded systems and electronic devices.


(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VCC: Power supply
  • GND: Ground
  • CE#: Chip enable
  • WE#: Write enable
  • RE#: Read enable
  • A0-A21: Address inputs
  • DQ0-DQ15: Data input/output
  • RY/BY# Output: Ready/Busy output
  • RP# Output: Ready/Busy output

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the S29GL01GS11DHIV20 NAND Flash memory for a better understanding of its functionality.

Key Features

  • High Capacity: The S29GL01GS11DHIV20 offers 1 Gbit of storage capacity, suitable for storing large amounts of data.
  • Fast Data Transfer Rate: With high-speed read and write operations, this NAND Flash memory provides quick access to stored information.
  • Reliable Storage: Featuring built-in error correction and wear-leveling mechanisms, the S29GL01GS11DHIV20 ensures data integrity and longevity.
  • Wide Operating Voltage Range: Operates within a standard voltage range, making it compatible with various electronic systems.
  • Industrial-grade Durability: Designed for industrial applications, this NAND Flash memory chip can withstand harsh environmental conditions.

Note: For detailed technical specifications, please refer to the S29GL01GS11DHIV20 datasheet.


  • Embedded Systems: Ideal for use in embedded systems, such as routers, industrial control systems, and IoT devices.
  • Storage Devices: Suitable for use in solid-state drives, memory cards, and other storage solutions requiring high capacity and speed.
  • Consumer Electronics: Used in various consumer electronic devices for data storage and program execution.


The S29GL01GS11DHIV20 NAND Flash memory chip provides reliable and high-speed data storage capabilities, making it a versatile solution for a wide range of electronic applications.

Usage Guide

  • Power Supply: Connect VCC (Pin X) to the power supply voltage within the specified range.
  • Data Transfer: Use the appropriate control signals (CE#, WE#, RE#) along with the address and data lines for reading from or writing to the memory.
  • Status Output: Monitor the RY/BY# and RP# outputs to determine the ready/busy status of the memory chip.

Frequently Asked Questions

Q: What is the data transfer rate of the S29GL01GS11DHIV20?
A: The S29GL01GS11DHIV20 offers a fast data transfer rate suitable for high-performance applications.

Q: Is the S29GL01GS11DHIV20 compatible with industrial environments?
A: Yes, the S29GL01GS11DHIV20 is designed to withstand industrial-grade conditions, making it suitable for industrial applications.


For similar functionalities, consider these alternatives to the S29GL01GS11DHIV20:

  • S34GL02GS08DH115: A 2 Gbit NAND Flash memory chip with similar performance characteristics and capacity.
  • MT29F1G08ABAEAH4-ITX: This NAND Flash memory device offers 1 Gbit storage capacity and high-speed data transfer rates.



The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series S29GL01G/512/256/128S Product Status Active
Programmabe Not Verified Memory Type NOR
Memory Format FLASH Technology FLASH - NOR
Memory Size 1 Gbit Memory Organization 64M x 16
Memory Interface Parallel Write Cycle Time - Word, Page 60ns
Access Time 110 ns Voltage - Supply 1.65V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount
Package / Case FBGA-64 Supplier Device Package 64-FBGA (9x9)
Base Product Number S29GL01 Manufacturer Infineon
Product Category NOR Flash RoHS Details
Mounting Style SMD/SMT Supply Voltage - Min 2.7 V
Supply Voltage - Max 3.6 V Active Read Current - Max 60 mA
Interface Type Parallel Organization 64 M x 16
Data Bus Width 16 bit Timing Type Asynchronous
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 85 C
Architecture Eclipse Brand Infineon Technologies
Moisture Sensitive Yes Product Type NOR Flash
Speed 110 ns Factory Pack Quantity 520
Subcategory Memory & Data Storage Tradename MirrorBit
Unit Weight 0.105825 oz

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