FGH75T65UPD
N-channel IGBT semiconductor chip rated for 650 volts and 150 amps, housed in a TO-247AB package with three pins and a tab
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.787 | $0.79 |
10 | $0.655 | $6.55 |
30 | $0.588 | $17.64 |
100 | $0.523 | $52.30 |
500 | $0.486 | $243.00 |
1000 | $0.465 | $465.00 |
Inventory:5,240
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : FGH75T65UPD
-
Package/Case : TO-247
-
Brands : Onsemi
-
Components Categories : Single IGBTs
-
Datesheet : FGH75T65UPD DataSheet (PDF)
Overview of FGH75T65UPD
ON Semiconductor's latest FGH75T65UPD product stands out in the market, thanks to its utilization of innovative field stop trench IGBT technology. This advanced technology ensures optimal performance in critical applications like solar inverters, UPS systems, welders, and digital power generators, where reducing conduction and switching losses is crucial for operational efficiency and cost-effectiveness
Key Features
- 75 Amp current rating
- 650V voltage rating
- Ultrafast recovery time
- Soft recovery characteristics
- Low forward voltage drop
- High thermal cycling performance
- Designed for high power applications
- RoHS compliant
- TO-247 package
Application
- Home Office Essentials
- Remote Work Solutions
- Organizational Tools
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | IGBT Transistors | RoHS | Details |
REACH | Details | Technology | Si |
Package / Case | TO-247 | Mounting Style | Through Hole |
Configuration | Single | Collector- Emitter Voltage VCEO Max | 650 V |
Collector-Emitter Saturation Voltage | 2.3 V | Maximum Gate Emitter Voltage | - 20 V, 20 V |
Continuous Collector Current at 25 C | 150 A | Pd - Power Dissipation | 187 W |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Series | FGH75T65UPD | Brand | onsemi / Fairchild |
Gate-Emitter Leakage Current | 400 nA | Product Type | IGBT Transistors |
Factory Pack Quantity | 450 | Subcategory | IGBTs |
Unit Weight | 0.225401 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
Similar Product
RFG60P06E
Suitable for power applications
BFG135A
Silicon NPN Transistor BFG135A: Tailored for L Band RF applications, this small signal transistor boasts a collector current capability of 0.15A
FGPF4633TU
TO-220FP package
FGL60N100BNTDTU
Insulated Gate Bipolar Transistor
FGH40N65UFDTU
Field Stop IGBT 650V 80A 1.8V TO247
FGB40N60SM
Field Stop Planar IGBTs rated at 600V and 40A - Second Generation
FGA60N60UFDTU
Trans IGBT Chip N-CH 600V 120A 298W 3-Pin(3+Tab) TO-3P Tube
FGA25N120ANTDTU
Trans IGBT Chip N-CH 1200V 50A 312W 3-Pin(3+Tab) TO-3PN Rail