TO-247

(319)
TO-247

The TO-247 (Transistor Outline 247) offers a robust, high-power packaging solution for integrated circuits in advanced electronic systems. Designed for efficient heat dissipation and reliability, this package is ideal for demanding applications in power electronics, automotive, industrial, and renewable energy sectors.

Part Number Description Manufacturers Inventory Add To Bom
IKW40N120T2 Trans IGBT Chip N-CH 1200V 75A 480W 3-Pin(3+Tab) TO-247 Tube Infineon 6,648
IPW65R080CFD Explore the advanced capabilities of the IPW65R080CFD, an N-Channel MOSFET Transistor Infineon 9,800
SPW24N60C3 This MOSFET transistor, model SPW24N60C3 from Infineon, features a high current handling capacity of 24 Infineon 4,188
DSEI60-06A The FRED Low Vf series boasts superior forward voltage characteristics and impressive breakdown voltages reaching up to 1200V Littelfuse 4,350
DSEI30-10A DSEI30-10A: 30A Diode Switch, 1KV Voltage Handling, TO-247AD Package Littelfuse 4,469
STW9NK90Z N-channel MOSFET with 900 V rating, 1.1 Ohm typ., and 8 A current capacity in TO-247 package STMicroelectronics NV 8,343
STW4N150 Its rugged design ensures reliable performance in harsh environments and offers high surge capabilit STMicroelectronics NV 5,157
NGTB50N120FL2WG IGBT for Solar/UPS applications, 1200V and 50A Onsemi 8,281
DSEI30-06A Rectifiers rated for 600V and 37A applications Littelfuse 4,976
STGW60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Stmicroelectronics Nv 7,357
STW20NM60 N-channel power MOSFET with a 600V rating and a maximum current of 20A, packaged in a TO-247 enclosure Stmicroelectronics 6,927
DSA90C200HB Experience superior efficiency and gentle recovery with the DSA90C200HB Schottky diode, designed with low loss and a common cathode arrangement." Ixys 7,099
DSEI60-12A Rectifier Diode Switching 1.2KV 52A 60ns 2-Pin(2+Tab) TO-247AD Ixys Integrated Circuits Division 7,417
IRFP250N Robust TO-package with a maximum operating voltage o Infineon 7,362
SCS240KE2C Rectifier diode utilizing Schottky design, with a maximum voltage rating of 1.2KV and current capability of 40A, housed in a TO-247 package Rohm Semiconductor 7,636
IKW15N120T2 Infineon IKW15N120T2 transistor with 1200 V and 30 A specifications, in TO-247 package Infineon 6,722
IPW60R099CP MOSFET N-Channel 600V 31A TO-247-3 CoolMOS CP Infineon 7,750
IPW60R125CP Infineon IPW60R125CP N-channel MOSFET Transistor, 25 A, 650 V, 3-Pin TO-247 INFINEON 4,233
NGTB40N120L3WG NGTB40N120L3WG is a high-performance Motor Driver IGBT designed for demanding industrial applications Onsemi 7,710
SCS230KE2C 200V Schottky rectifier Rohm Semiconductor 5,108
SPW20N60CFD Description of SPW20N60CFD N-Channel MOSFET Transistor Infineon 6,408
SPW35N60CFD TO247 package containing CoolMOS technology Infineon 6,289
SPW47N60CFD SPW47N60CFD - N-channel Power MOSFET, 600V, 46A, TO-247 Package Infineon 7,188
C4D20120D Schottky SiC Diode, 1.2KV, 68A, TO-247 Package wolfspeed 6,882
IGW50N60H3 High power IGBT transistors rated at 600V and 50A Infineon 6,186
IHW15N120R3 ROHS TO-247-3 IGBTs infineon 9,285
IKW08T120 IGBT Transistors with Low Loss DuoPack 1200V 8A Infineon 7,112
IKW40N120H3 IGBT Chip designed for high-speed operation infineon 5,065
IPW60R041C6 Green Plastic MOSFET Infineon 7,479
IPW60R045CP TO247-3 CoolMOS CP N-Channel 650V 60A MOSFET Infineon 7,379
IPW60R070CFD7 650V N-channel power MOSFET with 31A maximum current rating, packaged in TO-247 Infineon 9,190
IPW60R075CP N-channel transistor MOSFET with TO-247 packaging, designed for operation at 600V and 39A Infineon 6,405
IPW60R099C6 N-channel TO-247AC-3 MOSFET with a maximum voltage rating of 600V and a continuous drain current of 37.9A at 99mΩ resistance when biased at 10V Infineon 7,814
IPW60R160C6 Infineon IPW60R160C6 N-channel MOSFET Transistor, 23.8 A, 650 V, 3-Pin TO-247 INFINEON 6,425
IPW60R199CP Infineon IPW60R199CP N-channel MOSFET Transistor, 16 A, 650 V, 3-Pin TO-247 INFINEON 6,143
IPW65R190CFD IPW65R190CFD N-Channel MOSFET Transistor infineon 8,228
KCQ60A04 TO-247 packaged Schottky diodes and rectifiers capable of handling 60A current at 40V KYOCERA AVX 5,089
LM2476TB Display Driver and Control Texas Instruments 9,513
LME49810TB Audio amplifier with one channel and one functionality Texas Instruments 6,346
LME49811TB Part Number: LME49811TB TI 7,913
MBR30200PT Schottky Diodes & Rectifiers 30A, 200V, Schottky Rectifier Yangjie Technology 7,519
SCS240AE2C Rectifier Diode made of Silicon Carbide with Schottky technology, for single-phase use, with 2 elements, 20A and 650V V(RRM) Rohm Semiconductor 4,644
SCT2080KEC High-power N-Channel MOSFET with 1200V source voltage and low on-resistance Rohm Semiconductor 3,704
SCT2160KEC High-performance Silicon Carbide SiC MOSFET with 1200V voltage, 20A current, and 160mOhm resistance Rohm Semiconductor 6,813
SPW15N60C3 N-channel 600V 15A Power MOSFET with TO-247 package Infineon 9,074
SPW11N60C3 11A, 600V, N-Channel Power MOSFET with 0.38ohm Resistance INFINEON 4,035
SPW17N80C3 ROHS compliant power MOSFET capable of handling up to 227W Infineon 9,512
SPW20N60C3 N-channel MOSFET,SPW20N60C3 20.7A 650V Infineon 3,575
SPW20N60S5 This is the SPW20N60S5, an N-channel MOSFET rated for 600V and capable of handling currents as high as 20A Infineon 5,356
SPW32N50C3 N-Channel MOSFET Transistor SPW32N50C3 Infineon 6,006