TO-247
(319)The TO-247 (Transistor Outline 247) offers a robust, high-power packaging solution for integrated circuits in advanced electronic systems. Designed for efficient heat dissipation and reliability, this package is ideal for demanding applications in power electronics, automotive, industrial, and renewable energy sectors.
Part Number | Description | Manufacturers | Inventory | Add To Bom |
---|---|---|---|---|
IKW40N120T2 | Trans IGBT Chip N-CH 1200V 75A 480W 3-Pin(3+Tab) TO-247 Tube | Infineon | 6,648 | |
IPW65R080CFD | Explore the advanced capabilities of the IPW65R080CFD, an N-Channel MOSFET Transistor | Infineon | 9,800 | |
SPW24N60C3 | This MOSFET transistor, model SPW24N60C3 from Infineon, features a high current handling capacity of 24 | Infineon | 4,188 | |
DSEI60-06A | The FRED Low Vf series boasts superior forward voltage characteristics and impressive breakdown voltages reaching up to 1200V | Littelfuse | 4,350 | |
DSEI30-10A | DSEI30-10A: 30A Diode Switch, 1KV Voltage Handling, TO-247AD Package | Littelfuse | 4,469 | |
STW9NK90Z | N-channel MOSFET with 900 V rating, 1.1 Ohm typ., and 8 A current capacity in TO-247 package | STMicroelectronics NV | 8,343 | |
STW4N150 | Its rugged design ensures reliable performance in harsh environments and offers high surge capabilit | STMicroelectronics NV | 5,157 | |
NGTB50N120FL2WG | IGBT for Solar/UPS applications, 1200V and 50A | Onsemi | 8,281 | |
DSEI30-06A | Rectifiers rated for 600V and 37A applications | Littelfuse | 4,976 | |
STGW60V60DF | Trench gate field-stop IGBT, V series 600 V, 60 A very high speed | Stmicroelectronics Nv | 7,357 | |
STW20NM60 | N-channel power MOSFET with a 600V rating and a maximum current of 20A, packaged in a TO-247 enclosure | Stmicroelectronics | 6,927 | |
DSA90C200HB | Experience superior efficiency and gentle recovery with the DSA90C200HB Schottky diode, designed with low loss and a common cathode arrangement." | Ixys | 7,099 | |
DSEI60-12A | Rectifier Diode Switching 1.2KV 52A 60ns 2-Pin(2+Tab) TO-247AD | Ixys Integrated Circuits Division | 7,417 | |
IRFP250N | Robust TO-package with a maximum operating voltage o | Infineon | 7,362 | |
SCS240KE2C | Rectifier diode utilizing Schottky design, with a maximum voltage rating of 1.2KV and current capability of 40A, housed in a TO-247 package | Rohm Semiconductor | 7,636 | |
IKW15N120T2 | Infineon IKW15N120T2 transistor with 1200 V and 30 A specifications, in TO-247 package | Infineon | 6,722 | |
IPW60R099CP | MOSFET N-Channel 600V 31A TO-247-3 CoolMOS CP | Infineon | 7,750 | |
IPW60R125CP | Infineon IPW60R125CP N-channel MOSFET Transistor, 25 A, 650 V, 3-Pin TO-247 | INFINEON | 4,233 | |
NGTB40N120L3WG | NGTB40N120L3WG is a high-performance Motor Driver IGBT designed for demanding industrial applications | Onsemi | 7,710 | |
SCS230KE2C | 200V Schottky rectifier | Rohm Semiconductor | 5,108 | |
SPW20N60CFD | Description of SPW20N60CFD N-Channel MOSFET Transistor | Infineon | 6,408 | |
SPW35N60CFD | TO247 package containing CoolMOS technology | Infineon | 6,289 | |
SPW47N60CFD | SPW47N60CFD - N-channel Power MOSFET, 600V, 46A, TO-247 Package | Infineon | 7,188 | |
C4D20120D | Schottky SiC Diode, 1.2KV, 68A, TO-247 Package | wolfspeed | 6,882 | |
IGW50N60H3 | High power IGBT transistors rated at 600V and 50A | Infineon | 6,186 | |
IHW15N120R3 | ROHS TO-247-3 IGBTs | infineon | 9,285 | |
IKW08T120 | IGBT Transistors with Low Loss DuoPack 1200V 8A | Infineon | 7,112 | |
IKW40N120H3 | IGBT Chip designed for high-speed operation | infineon | 5,065 | |
IPW60R041C6 | Green Plastic MOSFET | Infineon | 7,479 | |
IPW60R045CP | TO247-3 CoolMOS CP N-Channel 650V 60A MOSFET | Infineon | 7,379 | |
IPW60R070CFD7 | 650V N-channel power MOSFET with 31A maximum current rating, packaged in TO-247 | Infineon | 9,190 | |
IPW60R075CP | N-channel transistor MOSFET with TO-247 packaging, designed for operation at 600V and 39A | Infineon | 6,405 | |
IPW60R099C6 | N-channel TO-247AC-3 MOSFET with a maximum voltage rating of 600V and a continuous drain current of 37.9A at 99mΩ resistance when biased at 10V | Infineon | 7,814 | |
IPW60R160C6 | Infineon IPW60R160C6 N-channel MOSFET Transistor, 23.8 A, 650 V, 3-Pin TO-247 | INFINEON | 6,425 | |
IPW60R199CP | Infineon IPW60R199CP N-channel MOSFET Transistor, 16 A, 650 V, 3-Pin TO-247 | INFINEON | 6,143 | |
IPW65R190CFD | IPW65R190CFD N-Channel MOSFET Transistor | infineon | 8,228 | |
KCQ60A04 | TO-247 packaged Schottky diodes and rectifiers capable of handling 60A current at 40V | KYOCERA AVX | 5,089 | |
LM2476TB | Display Driver and Control | Texas Instruments | 9,513 | |
LME49810TB | Audio amplifier with one channel and one functionality | Texas Instruments | 6,346 | |
LME49811TB | Part Number: LME49811TB | TI | 7,913 | |
MBR30200PT | Schottky Diodes & Rectifiers 30A, 200V, Schottky Rectifier | Yangjie Technology | 7,519 | |
SCS240AE2C | Rectifier Diode made of Silicon Carbide with Schottky technology, for single-phase use, with 2 elements, 20A and 650V V(RRM) | Rohm Semiconductor | 4,644 | |
SCT2080KEC | High-power N-Channel MOSFET with 1200V source voltage and low on-resistance | Rohm Semiconductor | 3,704 | |
SCT2160KEC | High-performance Silicon Carbide SiC MOSFET with 1200V voltage, 20A current, and 160mOhm resistance | Rohm Semiconductor | 6,813 | |
SPW15N60C3 | N-channel 600V 15A Power MOSFET with TO-247 package | Infineon | 9,074 | |
SPW11N60C3 | 11A, 600V, N-Channel Power MOSFET with 0.38ohm Resistance | INFINEON | 4,035 | |
SPW17N80C3 | ROHS compliant power MOSFET capable of handling up to 227W | Infineon | 9,512 | |
SPW20N60C3 | N-channel MOSFET,SPW20N60C3 20.7A 650V | Infineon | 3,575 | |
SPW20N60S5 | This is the SPW20N60S5, an N-channel MOSFET rated for 600V and capable of handling currents as high as 20A | Infineon | 5,356 | |
SPW32N50C3 | N-Channel MOSFET Transistor SPW32N50C3 | Infineon | 6,006 |