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DMC3400SDW-7

6-Pin SOT-363 Package Transistor MOSFET with 30V Voltage and 0.65A/0.45A Current Dual-Functionality

Quantity Unit Price(USD) Ext. Price
10 $0.064 $0.64
100 $0.053 $5.30
300 $0.047 $14.10
3000 $0.040 $120.00
6000 $0.036 $216.00
9000 $0.035 $315.00

Inventory:9,625

*The price is for reference only.
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Overview of DMC3400SDW-7

The DMC3400SDW-7 is a dual N-channel MOSFET power transistor designed for high-performance power management applications.This MOSFET features a low on-resistance and high continuous drain current, making it ideal for high-efficiency power conversion systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate of MOSFET 1
  • D: Drain of MOSFET 1
  • S: Source of MOSFET 1
  • G: Gate of MOSFET 2
  • D: Drain of MOSFET 2
  • S: Source of MOSFET 2
  • VCC: Power Supply Voltage
  • GND: Ground Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DMC3400SDW-7 MOSFET for a visual representation.

Key Features

  • Dual N-Channel MOSFET: Provides two N-channel MOSFETs in a single package for various power management applications.
  • Low On-Resistance: The DMC3400SDW-7 offers low on-resistance for reduced power dissipation and increased efficiency.
  • High Continuous Drain Current: With a high continuous drain current rating, this MOSFET can handle significant power loads.
  • Fast Switching Speed: Features fast switching characteristics, suitable for applications requiring rapid power control.
  • Thermal Protection: Includes built-in thermal protection mechanisms to prevent overheating and ensure device reliability.

Note: For detailed technical specifications, please refer to the DMC3400SDW-7 datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems, including voltage regulation, motor control, and DC-DC conversion.
  • Switching Circuits: Suitable for switching circuits where efficient power handling is required, such as inverter and power supply designs.
  • Battery Management: Used in battery management systems to regulate charging and discharging processes effectively.

Functionality

The DMC3400SDW-7 dual N-channel MOSFET provides reliable power switching capabilities for various power management applications, ensuring efficient and stable operation.

Usage Guide

  • Power Supply: Connect the VCC pin to the positive power supply voltage and the GND pin to the ground.
  • Gate Control: Apply appropriate gate voltage to the gate pins (G) to control the MOSFET switching behavior.
  • Load Connection: Connect the drain pins (D) to the load, ensuring proper current handling capacity.

Frequently Asked Questions

Q: Is the DMC3400SDW-7 suitable for high-power applications?
A: Yes, the DMC3400SDW-7 with its low on-resistance and high current handling capability is suitable for high-power applications such as motor control and power inverters.

Equivalent

For similar functionalities, consider these alternatives to the DMC3400SDW-7:

  • IRF3205: This is a high-current N-channel MOSFET suitable for power applications requiring high efficiency and low on-resistance.
  • SI2305: A dual N-channel MOSFET offering similar performance characteristics to the DMC3400SDW-7 for power management solutions.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-363-6 Transistor Polarity N-Channel, P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 650 mA, 450 mA Rds On - Drain-Source Resistance 200 mOhms, 360 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 800 mV, 2.6 V
Qg - Gate Charge 1.4 nC, 1.3 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 310 mW
Channel Mode Enhancement Series DMC3400
Brand Diodes Incorporated Configuration Dual
Fall Time 18.8 ns, 19 ns Product Type MOSFET
Rise Time 3.5 ns, 8.8 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time 25.2 ns, 35 ns Typical Turn-On Delay Time 3.8 ns, 5.7 ns
Unit Weight 0.000265 oz

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