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The SOT-363-6 (Small Outline Transistor 6-pin) offers a compact, high-reliability packaging solution for integrated circuits in advanced electronic systems. Designed for thermal efficiency and minimal footprint, this 6-lead configuration is ideal for space-constrained applications across telecommunications, automotive, and consumer electronics sectors.
| Part Number | Description | Manufacturers | Inventory | Add To Bom |
|---|---|---|---|---|
| SI1869DH-T1-E3 | This load switch offers reliable performance and high-level shifting functionality, making it a versatile solution for various electronic systems | Vishay | 7,545 | |
| DMG1016UDW-7 | Small Signal Field-Effect Transistor | Diodes Incorporated | 8,605 | |
| MGA-62563-BLKG | MGA-62563-BLKG RF Amplifier offering 3 stage voltage amplification with 22 dB gain | Broadcom Limited | 7,890 | |
| UM6K31NTN | At 10V and 150mW, UM6K31NTN showcases a voltage drop of 2.3V at 1mA, with its N-Channel SOT-363 MOSFETs meeting the ROHS requirements | Rohm Semiconductor | 20,000 | |
| DMC3400SDW-7 | 6-Pin SOT-363 Package Transistor MOSFET with 30V Voltage and 0.65A/0.45A Current Dual-Functionality | Diodes Incorporated | 299,625 | |
| BCM857BS-7-F | PNP Bipolar Junction Transistor for General Purpose Applications, with a Voltage Rating of 45 Volts and a Current Rating of 0 | DIODES | 7,773 | |
| BCR119S | Pre-Biased Bipolar Transistor | INFINEON | 5,977 | |
| BSS8402DW-7-F | Small Signal Field-Effect Transistor | Diodes Incorporated | 4,184 | |
| DDC123JU-7-F | Dual NPN Digital Transistor DDC123JU-7-F by Diodes Inc with 100 mA 50 V Ratio Of 2.2 kΩ, 6-Pin SOT-363 | Diodes Incorporated | 8,004 | |
| DMN3190LDW-7 | Green Plastic Package-6 | Diodes Incorporated | 4,560 | |
| DRTR5V0U4S-7 | TVS Diodes Array with Low Capacitance | Diodes Incorporated | 7,549 | |
| HN1B04FU-GR,LF | Transistor for amplifying small signals at low frequencies | Toshiba | 8,279 | |
| NLAS4157DFT2G | Analog Switch Single SPDT 6-Pin SC-88 T/R | International Rectifier | 8,134 | |
| PSA-5453+ | The PSA-5453+ is a versatile RF amplifier IC designed for a wide range of wireless applications." | Mini-Circuits | 7,499 | |
| SI1403CDL-T1-GE3 | P-Channel MOSFET with a voltage rating of 20 volts, capable of handling a maximum continuous drain current of 2 | Vishay Siliconix | 8,492 | |
| SMUN5314DW1T1G | BRT Complementary Bipolar Digital Transistor | onsemi | 8,551 | |
| UMD9NFHATR | Transistor Packaged in SOT-363 for Automotive Use with Integrated Bias Resistor | ROHM Semiconductor | 5,980 | |
| UMH9NFHATN | Bipolar Transistors - Pre-Biased NPN+NPN Digital transistor (Corresponds to AEC-Q101) | Rohm Semiconductor | 6,126 | |
| 74LVC2G14GW,125 | Inverter Schmitt Trigger 2-Element CMOS 6-Pin TSSOP T/R | Nexperia | 8,981 | |
| AG201-63G | High-frequency RF amplifier with a gain of 11dB at 900MHz | qorvo | 6,247 | |
| AG302-63G | Ideal for various communication applications such as satellite communication, radar systems, and mobile networks | qorvo | 6,131 | |
| BAS21TW-7 | With its high performance and reliability, BAS21TW-7 is a popular choice for electronic devices requiring efficient signal handling | Diodes Incorporated | 6,460 | |
| BAV756DW | BAV756DW Rectifier Diode | Diotec Semiconductor AG | 6,693 | |
| BSD235NH6327XTSA1 | MOSFET N-type with 20V maximum voltage and 950mA maximum current in SOT-363-6 package | Infineon Technologies | 6,580 | |
| DMN63D8LDW-7 | The DMN63D8LDW-7 package is designed for use in various electronic circuits requiring efficient power management and voltage regulation | Diodes Incorporated | 8,113 | |
| DZDH0401DW-7 | Efficient controller for diode operation | DIODES | 6,843 | |
| SDA004-7 | Diodes Inc SDA004-7 Switching Diode, 500mA 80V, 6-Pin SOT-363 | Diodes Incorporated | 8,051 | |
| SI1427EDH-T1-GE3 | P-Channel MOSFET with a 20V rating and 2A current capacity in a 6-pin SC-70 package, available in tape and reel packaging | Vishay | 6,210 | |
| SI1443EDH-T1-GE3 | High Efficiency Power Semiconductor | Vishay | 6,802 | |
| SI1480DH-T1-GE3 | Small Signal Field-Effect Transistor | Vishay | 6,021 | |
| SI1926DL-T1-E3 | N Channel 60V 370mA 1.4 ohm | Vishay | 8,276 | |
| SI1965DH-T1-GE3 | SI1965DH-T1-GE3 Dual P-Channel MOSFET, 1.2 A, 12 V, 6-Pin SOT-363 Vishay | Vishay Siliconix | 5,711 | |
| UM6K1NTN | Transistor MOSFET Array | Rohm Semiconductor | 7,624 | |
| UMD12NTR | Compliance: ROHS certified for environmental standards | ROHM Semiconductor | 6,776 | |
| UMD2NTR | SOT-363 packaged NPN and PNP dual digital transistor with built-in bias resistor | Rohm Semiconductor | 7,353 | |
| UMD5NTR | NPN+PNP SOT-363 Dual Digital Transistor | Rohm Semiconductor | 5,269 | |
| UMH9NTN | Dual NPN Digital Transistor with 50 V and 100 mA from UMH9N Series | ROHM Semiconductor | 7,414 | |
| BAS16TW | Rectifier diode in a compact plastic package, RoHS compliant, with three elements and specifications of 0.15A and 75V V(RRM) | CJ/WINNERJOIN | 7,580 | |
| BAV99BRW | BAV99BRW is a type of small signal switching diode, featuring a voltage range of 50-350V, a 75V capacity, and a power dissipation of 200mW | CJ/WINNERJOIN | 8,285 | |
| D3V3F4U6S-7 | 5A@(8/20us) 10V 6V 3.3V SOT-363 Electrostatic and Surge Protection TVS/ESD ROHS | Diodes Incorporated | 8,193 | |
| SBC847BPDW1T3G | Automotive Transistor with NPN/PNP Configuration, 45V Voltage Rating, 0 | International Rectifier | 9,246 | |
| BCR183S | Product BCR183S is a line of pre-biased bipolar transistors | Infineon | 7,860 | |
| MUN5211DW1T1G | MUN5211DW1T1G is a SOT-363 NPN-Pre-Biased Digital Transistor with 2V and 100mA | International Rectifier | 6,865 | |
| NLAST4599DFT2G | Analog Switch Single SPDT 6-Pin SC-88 T/R | International Rectifier | 5,386 | |
| SBC857BDW1T1G | Trans GP BJT PNP 45V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R | onsemi | 9,080 | |
| SBC847BDW1T1G | 0.1A NPN Transistor with 380mW Power Dissipation | onsemi | 6,137 | |
| SBC856BDW1T1G | Trans GP BJT PNP 65V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R | onsemi | 6,188 | |
| SMUN5111DW1T1G | Dual PNP Transistor, Bipolar Digital (BRT) | onsemi | 8,434 | |
| SGL0363Z | RF/Microwave amplifier with wide bandwidth and low power output | qorvo | 7,893 | |
| SGC2463Z | Silicon Germanium Low Noise RF Amplifier | qorvo | 7,894 |