AUIRF7759L2TR
15-pin Surface Mount Package
Inventory:7,723
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Part Number : AUIRF7759L2TR
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Package/Case : DirectFET™ Isometric L8
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Brands : INFINEON
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Components Categories : Single FETs, MOSFETs
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Datesheet : AUIRF7759L2TR DataSheet (PDF)
The AUIRF7759L2TR is a power MOSFET with a high-side driver IC designed for automotive applications. It features low on-state resistance and high current capability, making it ideal for use in automotive power distribution systems, motor controls, and other high-power applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the AUIRF7759L2TR for a visual representation. Note: For detailed technical specifications, please refer to the AUIRF7759L2TR datasheet. Functionality The AUIRF7759L2TR integrates a power MOSFET with a high-side driver, providing efficient power control and high current capability. It is designed for reliable performance in automotive power and motor control applications. Usage Guide Q: What is the maximum current rating of AUIRF7759L2TR? Q: Is the AUIRF7759L2TR suitable for automotive powertrain applications? For similar functionalities, consider these alternatives to the AUIRF7759L2TR:Overview of AUIRF7759L2TR
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The AUIRF7759L2TR is capable of handling high currents up to X amperes.
A: Yes, the AUIRF7759L2TR is designed for automotive applications and can be used in powertrain systems requiring high-current switching capabilities.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | Infineon | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | DirectFET-L8 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 75 V | Id - Continuous Drain Current | 160 A |
Rds On - Drain-Source Resistance | 1.8 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 300 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 125 W | Channel Mode | Enhancement |
Qualification | AEC-Q101 | Brand | Infineon Technologies |
Configuration | Single | Fall Time | 33 ns |
Forward Transconductance - Min | 74 S | Height | 0.74 mm |
Length | 9.15 mm | Product Type | MOSFET |
Rise Time | 37 ns | Factory Pack Quantity | 4000 |
Subcategory | MOSFETs | Typical Turn-Off Delay Time | 80 ns |
Typical Turn-On Delay Time | 18 ns | Width | 7.1 mm |
Unit Weight | 0.006227 oz |
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