AUIRFS3107-7P
Ideal for use in automotive power management systems
Inventory:6,500
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Part Number : AUIRFS3107-7P
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Package/Case : TO263-7
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Brands : INFINEON
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Components Categories : Single FETs, MOSFETs
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Datesheet : AUIRFS3107-7P DataSheet (PDF)
The AUIRFS3107-7P is a power MOSFET designed for high-performance automotive applications. This MOSFET features a low on-state resistance and high current capability, making it suitable for use in power management and switching circuits in automotive electronics. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the AUIRFS3107-7P MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the AUIRFS3107-7P datasheet. Functionality The AUIRFS3107-7P power MOSFET provides efficient power management and switching capabilities for automotive electronic systems, ensuring reliable performance in automotive applications. Usage Guide Q: Is the AUIRFS3107-7P suitable for automotive powertrain applications? For similar functionalities, consider these alternatives to the AUIRFS3107-7P:Overview of AUIRFS3107-7P
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the AUIRFS3107-7P is designed for automotive applications, including powertrain systems.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | TO-263-7 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 75 V | Id - Continuous Drain Current | 260 A |
Rds On - Drain-Source Resistance | 2.5 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 4 V | Qg - Gate Charge | 160 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 370 W | Channel Mode | Enhancement |
Qualification | AEC-Q101 | Brand | Infineon Technologies |
Configuration | Single | Fall Time | 64 ns |
Forward Transconductance - Min | 260 S | Height | 4.4 mm |
Length | 10 mm | Product Type | MOSFET |
Rise Time | 80 ns | Factory Pack Quantity | 2000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | Automotive MOSFET | Typical Turn-Off Delay Time | 100 ns |
Typical Turn-On Delay Time | 17 ns | Width | 9.25 mm |
Unit Weight | 0.056438 oz |
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Warranty, Returns, and Additional Information
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